|
|
 |
NXP Semiconductors N.V.
|
Part No. |
PHN210T
|
OCR Text |
fet) in a plastic package using trenchmos technology. this product is designed and qualified for use in computing, communications, consum...30v i d drain current t sp = 25 c; single device [1] --3.4a p tot total power dissipation t sp =25c... |
Description |
Dual N-channel TrenchMOS intermediate level FET 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
File Size |
128.68K /
13 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|