eoss pdf Datasheet P8 Full Text Search --- IC-ON-LINE

eoss Datasheet PDF File

For eoss Found Datasheets File :: 370 Search Time::3.891ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				INFINEON[Infineon Technologies AG]
Part No.	SPP06N80C3 SPA06N80C3
OCR Text	...S 19 Typ. Coss stored energy eoss=f(VDS) 7 J E oss 5 4 3 2 1 0 0 100 200 300 400 500 600 800 V VDS Page 9 2003-07-02 Final data SPP06N80C3 SPA06N80C3 Definition of diodes switc...
Description	for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... Cool MOS Power Transistor Cool MOS⑩ Power Transistor
File Size	251.05K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPP17N80C3 SPP17N80C307
OCR Text	...S 19 Typ. Coss stored energy eoss=f(VDS) 18 J 14 E oss 12 10 8 6 4 2 0 0 100 200 300 400 500 600 800 V VDS Rev. 2.6 Page 9 2007-08-30 SPP17N80C3 SPA17N80C3 Definition of diodes switching ...
Description	New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
File Size	577.63K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPD08N50C3
OCR Text	...eter: VGS =0V, f=1 MHz 10 4 eoss=f(VDS) 4 pF J Ciss 10 3 3 E oss 10 2 Coss C 2.5 2 1.5 10 1 Crss 1 0.5 10 0 0 100 200 300 V 500 0 0 100 200 300 V 500 VDS VDS ...
Description	for lowest Conduction Losses & fastest Switching Cool MOS⑩ Power Transistor Cool MOS Power Transistor
File Size	253.38K / 11 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPW11N60C2
OCR Text	...2 18 Typ. Coss stored energy eoss=f(VDS ) pF Ciss 10 3 J 7.5 6 5.5 E oss 10 2 5 4.5 4 C Coss 3.5 3 2.5 10 1 Crss 2 1.5 1 0.5 10 0 0 100 200 300 400 V 600 0 0 100 200...
Description	for lowest Conduction Losses & fastest Switching Cool MOS⑩ Power Transistor Cool MOS Power Transistor Cool MOS?/a> Power Transistor
File Size	118.43K / 11 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPN04N60C2
OCR Text	...S 15 Typ. Coss stored energy eoss=f(VDS ) 3.5 J E oss 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Page 8 2002-07-29 Final data SPN04N60C2 Definition of diodes switching chara...
Description	for lowest Conduction Losses & fastest Switching Cool MOS Power Transistor Cool MOS⑩ Power Transistor
File Size	96.25K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies
Part No.	08N80C3
OCR Text	...S 19 Typ. Coss stored energy eoss=f(VDS) 9 J 7 E oss 6 5 4 3 2 1 0 0 100 200 300 400 500 600 800 V VDS Page 9 2003-07-02 Final data SPP08N80C3 SPA08N80C3 Definition of diodes switching ch...
Description	Search --To SPP08N80C3
File Size	290.80K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPD04N60C2 SPU04N60C2
OCR Text	...2 18 Typ. Coss stored energy eoss=f(VDS ) pF J 10 3 Ciss C E oss 10 2 2.5 2 1.5 Coss 10 1 Crss 1 0.5 10 0 0 100 200 300 400 V 600 0 0 100 200 300 400 V 600 VDS...
Description	for lowest Conduction Losses & fastest Switching Cool MOS Power Transistor Cool MOS⑩ Power Transistor
File Size	142.50K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies
Part No.	SPP11N60CFD
OCR Text	...4 16 Typ. Coss stored energy eoss=f(V DS) pF Ciss 10 3 J 7.5 6 5.5 E oss 10 2 5 4.5 4 C Coss 3.5 3 2.5 10 1 Crss 2 1.5 1 0.5 10 0 0 100 200 300 400 V 0 600 0 100 200 ...
Description	Cool MOS Power Transistor
File Size	183.08K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies
Part No.	IPA65R660CFD
OCR Text	... to very low fom rdson*qg and eoss ? easy to use/drive ? qualified for industrial grade applications according to jedec 1) ? pb-free plating, halogen free mold compound applications 650v coolmos? cfd is especially su itable for resonan...
Description	MOSFET
File Size	910.06K / 20 Page	View it Online	Download Datasheet

				http://
Part No.	FMH20N60S1
OCR Text	...2 14 typical coss stored energy eoss [uj] v ds [v] i d [a] 0 1 0 2 0 3 0 4 0 5 0 6 0 0 2 4 6 8 10 q g [nc] typical gate charge characteristics v gs = f(q g ): i d =20a, v dd =480v, t ch =25c v gs [v] 10 -6 10 -5 10 -4 10 -3 10 -2 10 ...
Description	N-Channel enhancement mode power MOSFET
File Size	309.41K / 7 Page	View it Online	Download Datasheet

For eoss Found Datasheets File :: 370 Search Time::3.891ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |