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03455102 TNY2641 611APF GUF30 74HCT174 ADE7762 936904 2SD20
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  e 35 Datasheet PDF File

For e 35 Found Datasheets File :: 305859    Search Time::2.391ms    
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    2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518

NEC[NEC]
NEC Corp.
Part No. 2SC5015 2SC5015-T1 2SC5015-T2 2SC5015Ne68518
OCR Text ....236 S22 ANG -13.1 -24.3 -31.7 -35.6 -39.2 -40.7 -42.0 -44.4 -44.0 -43.9 -45.7 -47.1 -48.3 -48.3 -51.6 -53.2 -51.8 -54.2 -55.3 -60.1 -61.0 -64.1 -63.5 -66.9 -68.9 -67.8 -73.3 -75.5 -77.9 -82.2 VCe = 3 V, IC = 5 mA FReQUeNCY f (MHz) 100....
Description Discrete
HIGH FReQUeNCY LOW NOISe AMPLIFIeR NPN SILICON ePITAXIAL TRANSISTOR 4 PINS SUPeR MINI MOLD

File Size 49.94K  /  8 Page

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    2SC5034

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5034
OCR Text ...) Ratings 500 500 400 7 15 7 3 35 2.0 150 -55 to +150 Unit V V V V A A A W C C 15.00.3 3.00.2 Parameter Collector to base voltage Collector to emitter voltage emitter to base voltage Peak collector current Collector current Base c...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.16K  /  3 Page

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    2SC5063

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5063
OCR Text ...tor power dissipation PC (W) 35 30 25 20 15 10 5 (2) (3) 0 0 20 40 Collector current IC (A) 1.6 1.4 1.2 1.0 60mA 0.8 0.6 0.4 0.2 0 40mA 30mA 20mA 10mA 120mA 100mA 80mA 3 TC=100C 1 25C 0.3 -25C 0.1 0.03 60 80 100 120 140...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 60.70K  /  3 Page

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    2SC5080

HITACHI[Hitachi Semiconductor]
Part No. 2SC5080
OCR Text ...an) : http://www.hitachi.com.tw/e/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc...
Description Silicon NPN Transistor
Silicon NPN epitaxial

File Size 47.56K  /  8 Page

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    2SD1133 2SD1134

HITACHI[Hitachi Semiconductor]
Part No. 2SD1133 2SD1134
OCR Text ...A, Ie = 0 I C = 50 mA, RBe = I e = 10 A, IC = 0 VCB = 50 V, Ie = 0 VCe = 4V I C = 1 A*2 I C = 0.1 A*2 I C = 2 A, IB = 0.2 A*2 VCe = 4 V, IC = 1 A*2 VCe = 4 V, IC = 0.5 A*2 Min 70 50 5 -- 60 35 -- -- -- Typ -- -- -- -- -- -- -- -- 7 ...
Description Silicon NPN Triple Diffused

File Size 32.05K  /  5 Page

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    2SD1135

HITACHI[Hitachi Semiconductor]
Part No. 2SD1135
OCR Text ...onditions I C = 50 mA, RBe = I e = 10 A, IC = 0 VCB = 80 V, Ie = 0 VCe = 5 V, IC = 1 A*2 VCe = 5 V, IC = 0.1 A*2 VCe = 5 V, IC = 1 A*2 I C ...35 -- -- -- -- V V MHz pF Notes: 1. The 2SD1135 is grouped by h Fe1 as follows. 2. Pulse test....
Description Silicon NPN Triple Diffused

File Size 31.07K  /  5 Page

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    2SD1209 2SD1209K

HITACHI[Hitachi Semiconductor]
Part No. 2SD1209 2SD1209K
OCR Text ...an) : http://www.hitachi.com.tw/e/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc...
Description Silicon NPN epitaxial/ Darlington
Silicon NPN epitaxial, Darlington

File Size 30.18K  /  6 Page

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    2SD2439

SANKEN[Sanken electric]
Part No. 2SD2439
OCR Text equivalent circuit C Darlington 2SD2439 selectrical Characteristics Symbol ICBO IeBO V(BR)CeO hFe VCe(sat) VBe(sat) fT COB Condit...35 B C e Weight : Approx 6.5g a. Type No. b. Lot No. IC - VCe Characteristics (Typica...
Description Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)

File Size 24.85K  /  1 Page

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    2SD468

Hitachi Semiconductor
Part No. 2SD468
OCR Text ... A, Ie = 0 I C = 1 mA, RBe = I e = 10 A, IC = 0 VCB = 20 V, Ie = 0 VCe = 2 V, IC = 0.5 A*2 I C = 0.8 A, IB = 0.08 A*2 VCe = 2 V, IC = 0.5 A...35 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any ...
Description Silicon NPN Transistor
Silicon NPN epitaxial

File Size 29.49K  /  6 Page

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    2SD476 2SD476A 2SD476AK 2SD476K

HITACHI[Hitachi Semiconductor]
Part No. 2SD476 2SD476A 2SD476AK 2SD476K
OCR Text ...A, Ie = 0 I C = 50 mA, RBe = I e = 10 A, IC = 0 VCB = 50 V, Ie = 0 VCe = 4 V, IC = 1 A (Pulse test) VCe = 4 V, IC = 0.1 A I C = 2 A, IB = 0.2 A DC current transfer ratio hFe1 hFe2 Collector to emitter saturation voltage Base to emitter ...
Description Silicon NPN Triple Diffused

File Size 32.08K  /  5 Page

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