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  DAIDM-11J Datasheet PDF File

For DAIDM-11J Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    ADXL311 ADXL311JE ADXL311JE-REEL ADXL311EB

ANALOG DEVICES INC
AD[Analog Devices]
Part No. ADXL311 ADXL311JE ADXL311JE-REEL ADXL311EB
Description Low Cost, Ultracompact ±2 g Dual-Axis Accelerometer
Low Cost, Ultracompact ?? g Dual-Axis Accelerometer
Low Cost/ Ultracompact 2 g Dual-Axis Accelerometer
Low Cost, Ultracompact 2 g Dual-Axis Accelerometer
Low Cost, Ultracompact 【2 g Dual-Axis Accelerometer
Low Cost, Ultracompact ? g Dual-Axis Accelerometer
Low Cost, Ultra Compact, ±2 g, Dual Axis Accelerometer

File Size 214.07K  /  12 Page

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HUA FENG CIRCUIT





    CD9011 CD9011D CD9011E CD9011F CD9011G CD9011H CD9011I CD9011J

Continental Device India Limited
Part No. CD9011 CD9011D CD9011E CD9011F CD9011G CD9011H CD9011I CD9011J
Description 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 29 - 273 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 29 - 44 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 40 - 59 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 54 - 80 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 72 - 108 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 97 - 146 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 132 - 198 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 182 - 273 hFE

File Size 85.83K  /  3 Page

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    AD81104 AD811ANZ AD811JRZ

Analog Devices
Part No. AD81104 AD811ANZ AD811JRZ
Description High Performance Video Op Amp

File Size 372.76K  /  20 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT8011JFLL
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 263.49K  /  5 Page

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    Microsemi, Corp.
ADPOW[Advanced Power Technology]
Part No. APT20M11JVR
Description Power MOSFET; Package: ISOTOP&#174;; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm

File Size 74.41K  /  4 Page

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    ADPOW[Advanced Power Technology]
Part No. APT20M11JLL
Description POWER MOS 7 MOSFET

File Size 165.20K  /  5 Page

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    Microsemi
Part No. APT20M11JLL
Description MOSFET

File Size 157.97K  /  5 Page

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    APT8011 APT8011JFLL

ADPOW[Advanced Power Technology]
Part No. APT8011 APT8011JFLL
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.29K  /  2 Page

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    ADPOW[Advanced Power Technology]
Part No. APT10M11JVR
Description POWER MOS V 100V 144A 0.011 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 70.67K  /  4 Page

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    EPCOS AG
Part No. CD9011D CD9011G CD9011J CD9011F CD9011I CD9011E CD9011H
Description TRANSISTOR | BJT | PNP | 18V V(BR)CEO | TO-92 晶体管|晶体管|进步党| 18V的五(巴西)总裁|2

File Size 58.14K  /  3 Page

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For DAIDM-11J Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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