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  c-fet Datasheet PDF File

For c-fet Found Datasheets File :: 20566    Search Time::3.719ms    
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    2SJ452

HITACHI[Hitachi Semiconductor]
Part No. 2SJ452
OCR Text ... -55 to +150 Unit V V A A mW C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min -50 20 -- -- -0.5 -- -- 0.1 -- -- -- -- -- -- -- Typ -- -- --...
Description    Silicon P-Channel MOS FET

File Size 39.33K  /  8 Page

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    2SJ471

HITACHI[Hitachi Semiconductor]
Part No. 2SJ471
OCR Text ...-55 to +150 Unit V V A A A W C C 2 2SJ471 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V...
Description Silicon P Channel DV-L MOS FET High Speed Power Switching

File Size 46.25K  /  10 Page

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    2SJ475-01

FUJI[Fuji Electric]
Part No. 2SJ475-01
OCR Text ...50 -55 ~ +150 Unit V A A V mJ W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain...FET -60V 0,06 2SJ475-01 FAP-III Series Drain-Source On-State Resistance vs. Tch RDS(on) = ...
Description FAP-III Series

File Size 296.96K  /  2 Page

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    2SJ479 2SJ479L 2SJ479S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ479 2SJ479L 2SJ479S
OCR Text ...-55 to +150 Unit V V A A A W C C 2 2SJ479(L), 2SJ479(S) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Sym...
Description Power switching MOSFET
Silicon P Channel DV-L MOS FET High Speed Power Switching
Silicon P Channel DVL MOS FET High Speed Power Switching

File Size 37.54K  /  7 Page

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    2SJ483

HITACHI[Hitachi Semiconductor]
Part No. 2SJ483
OCR Text ...-55 to +150 Unit V V A A A W C C Body to drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1. PW 10s, duty cycle 1 % Pch Tch Tstg 2 2SJ483 Electrical Characteristics (Ta ...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 42.73K  /  9 Page

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    2SJ484

HITACHI[Hitachi Semiconductor]
Part No. 2SJ484
OCR Text ...-55 to +150 Unit V V A A A W C C Notes: 1. PW 100s, duty cycle 10 % 2. When using aluminium ceramic board (12.5 x 20 x 0.7 mm) 2 2SJ484 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to sou...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 42.55K  /  9 Page

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    2SJ486

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ486
OCR Text ... -55 to +150 Unit V V A A mW C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS...
Description RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开
Silicon P Channel MOS FET Low FrequencyPower Switching
Silicon P-Channel MOS FET

File Size 40.30K  /  8 Page

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    2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00

NEC[NEC]
Part No. 2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text ...g -60 # 20 V V V A A W W C C A mJ -20, 0 # 20 # 80 Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 ...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 70.31K  /  8 Page

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    2SJ493 D11265EJ3V0DS00

NEC[NEC]
Part No. 2SJ493 D11265EJ3V0DS00
OCR Text ...g -60 # 20 V V V A A W W C C A mJ -20, 0 # 16 # 64 Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 ...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 64.87K  /  8 Page

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    2SJ494 D11266EJ2V0DS00

NEC[NEC]
Part No. 2SJ494 D11266EJ2V0DS00
OCR Text ...otal Power Dissipation (TC = 25 C) Total Power Dissipation (TA = 25 C) Channel Temperature Storage Temperature VDSS VGSS (AC) VGSS (DC) ID (...FET features and application to switching power supply Application circuits using Power MOS FET Safe...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 68.73K  /  8 Page

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For c-fet Found Datasheets File :: 20566    Search Time::3.719ms    
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