|
|
 |
IDT
|
Part No. |
IDT71V2576
|
OCR Text |
...y
A0-A17 CE CS0, CS1 OE GW BWE BW1, BW2, BW3, BW4 CLK ADV ADSC ADSP LBO ZZ I/O0-I/O31, I/OP1-I/OP4 VDD, VDDQ VSS
(1)
Address Inputs Chi...6.42 2
IDT71V2576, IDT71V2578, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipeli... |
Description |
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs,Burst Counter, Single Cycle Deselect
|
File Size |
511.76K /
23 Page |
View
it Online |
Download Datasheet
|
|
|
 |
IDT
|
Part No. |
IDT71V67802
|
OCR Text |
...y
A0-A18 CE CS0, CS1 OE GW BWE BW1, BW2, BW3, BW4(1) CLK ADV ADSC ADSP LBO ZZ I/O0-I/O31, I/OP1-I/OP4 VDD, VDDQ VSS Address Inputs Chip Ena...6.42 2
IDT71V67602, IDT71V67802, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipe... |
Description |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect
|
File Size |
512.42K /
23 Page |
View
it Online |
Download Datasheet
|
|
|
 |
INTEGRATED SILICON SOLUTION INC
|
Part No. |
IS64LF6432-8.5TQA2
|
OCR Text |
...individual bytes to be written. bw1 controls dq1-dq8, bw2 controls dq9-dq16, bw3 controls dq17-dq24, bw4 controls dq25-dq32, condi- ti...6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 80 79 78 77 76 75 74 73 72 71... |
Description |
64K X 32 CACHE SRAM, 8.5 ns, PQFP100
|
File Size |
108.35K /
17 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Integrated Silicon Solution, Inc.
|
Part No. |
IS61SP12836
|
OCR Text |
...individual bytes to be written. bw1 controls dqa, bw2 controls dqb, bw3 controls dqc, bw4 controls dqd, conditioned by bwe being lo...6 6.7 7.5 10 ns frequency 200 166 150 133 100 mhz 128k x 32, 128k x 36 synchronous pipelined static ... |
Description |
128K x 36 Synchronous Pipelined SRAM(128K x 36 同步流水线静态RAM) 128K的同步流水线× 36的SRAM28K的36同步流水线静态内存)
|
File Size |
127.18K /
15 Page |
View
it Online |
Download Datasheet
|
|
|
 |
GSI Technology, Inc.
|
Part No. |
GS84118B-150I
|
OCR Text |
...v ), and write control inputs ( bw1 , bw2 , bwe , gw, de ) are synchronous and are controlled by a positive-edge-triggered clock (clk)....6.0 ns 3.5 ns 310 ma 6.6 ns 3.8 ns 275 ma 7.5 ns 4.0 ns 250 ma 10 ns 4.5 ns 190 ma flow through 2-1... |
Description |
256K x 18 Sync Cache Tag 256K X 18 CACHE TAG SRAM, 10 ns, PBGA119
|
File Size |
723.81K /
30 Page |
View
it Online |
Download Datasheet
|
|
|
 |
IDT
|
Part No. |
IDT71V67702
|
OCR Text |
...y
A0-A18 CE CS0, CS1 OE GW BWE BW1, BW2, BW3, BW4(1) CLK ADV ADSC ADSP LBO ZZ I/O0-I/O31, I/OP1-I/OP4 VDD, VDDQ VSS Address Inputs Chip Ena...6.42 2
IDT71V67702, IDT71V67902, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Flow... |
Description |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect
|
File Size |
514.56K /
23 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|