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Vishay
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| Part No. |
SUD50N03-07
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| OCR Text |
... = 15 v i d = 45 a v gs = 10, 9, 8, 7, 6 v v gs = 10 v v gs = 4.5 v c rss t c = 55 c 25 c 125 c 3 v c oss c iss i d drain current (a) 4 v
siliconix sud50n03-07 vishay-siliconix, 2201 laurelwood road, santa clara, ca 95054 ... |
| Description |
N-Channel Enhancement-Mode Transistor
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| File Size |
69.73K /
4 Page |
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it Online |
Download Datasheet
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Infineon
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| Part No. |
SPP80N06S2-07 SPB80N06S2-07
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| OCR Text |
...teau ) v dd =44v, i d =80a - 4.9 - v reverse diode inverse diode continuous forward current i s t c =25c - - 80 a inverse diode direct cur...07 spb80n06s2-07 preliminary data 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 140... |
| Description |
Low Voltage MOSFETs - TO220/263/262; 80A; 55V; NL; 6.6mOhm
N-Channel OptiMOS Power Transistor
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| File Size |
515.70K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPB80N06S2-07 SPP80N06S2-07 SPI80N06S2-07
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| OCR Text |
...80A, RG =3.3
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18 35 86 4.9
24 53 110 -
nC
V(plateau) VDD =44V, ID =80A
V
Reverse Diode Inverse diode continuous forwar...07 SPP80N06S2-07,SPB80N06S2-07 1 Power dissipation Ptot = f (TC) parameter: VGS 6 V
280
SPP80N06S2... |
| Description |
80 A, 55 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
OptiMOS Power-Transistor 的OptiMOS功率晶体
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| File Size |
418.58K /
8 Page |
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it Online |
Download Datasheet |
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Infineon Technologies AG
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| Part No. |
IPB100N08S2L-07 IPP100N08S2L-07 SP0002-19052 SP0002-19053
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| OCR Text |
... V, I F=I S, di F/dt =100 A/s 0.9 100 400 1.3 V A Q gs Q gd Qg V plateau V DD=60 V, I D=100 A, V GS=0 to 10 V 18 70 182 3.5 25 124 246 V nC ...07 IPP100N08S2L-07
1 Power dissipation P tot = f(T C); V GS 4 V 2 Drain current I D = f(T C); V GS... |
| Description |
100 A, 75 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
OptiMOS? Power-Transistor
OptiMOS㈢ Power-Transistor
OptiMOSPower-Transistor
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| File Size |
151.43K /
8 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
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| Part No. |
SPB80N08S2L-07 SPP80N08S2L-07
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| OCR Text |
... v, i d = 40 a r ds(on) - tbd 9 m ? drain-source on-state resistance v gs = 10 v, i d = 40 a r ds(on) - tbd 7.1 1 device on 40mm*40mm*...07 spb80n08s2l-07 target data sheet electrical characteristics, at t j = 25 c, unless otherwise ... |
| Description |
OptiMOS Power-Transistor( MOS型功率晶体管)
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| File Size |
51.04K /
5 Page |
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it Online |
Download Datasheet |
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SYNQOR INC
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| Part No. |
MCOTS-C-28-07-QT-N-S
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| OCR Text |
...rn-on transient turn-on time 9 ms full load, vout=90% nom. start-up inhibit time 200 230 250 ms see figure f output voltage overshoot...07-qt output: current: technical specification product # mcots-c-28-07-qt phone 1-888-567-9596 www.s... |
| Description |
1-OUTPUT 120.19 W DC-DC REG PWR SUPPLY MODULE
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| File Size |
2,240.55K /
15 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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