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56mh Datasheet PDF File

For 56mh Found Datasheets File :: 471 Search Time::3.078ms
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				IRF[International Rectifier]
Part No.	IRFP3703
OCR Text	... Max. 210 100 1000 230 3.8 1.5 20 5.0 -55 to + 175 Units A W W/C V V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-...6mH RG = 25, I AS = 76A. ISD 76A, di/dt 100A/s, VDD V(BR)DSS, TJ 175C Calculated conti...
Description	Power MOSFET(Vdss=30V, Rds(on)max=0.0028ohm, Id=210A?) HEXFET? Power MOSFET
File Size	163.88K / 8 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	VNQ5050KTR VNQ5050KTR-E VNQ5050K-E
OCR Text	...STATUS4 STAT_DIS VCC 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 OUTPUT1 OUTPUT1 OUTPUT1 OUTPUT2 OUTPUT2 OUTPUT2...6mH IOUT=0.1A (see fig. 6) Tj= -40C...+150C Note: 3. To ensure long term reliability under heavy ...
Description	QUAD CHANNEL HIGH SIDE DRIVER FOR AUTOMOTIVE APPLICATIONS
File Size	103.28K / 13 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	VNQ05XSP1613TR VNQ05XSP16
OCR Text	...lue 41 -0.3 Internally limited -5 +/- 10 -3 +15 -200 4000 2000 5000 5000 78 76 Internally limited - 40 to 150 -55 to 150 Unit V V A A mA V V...6mH IOUT=0.1A Tj=-40C...+150C 15 175 Test Conditions Min 5 Typ 7.5 Max 10 10 200 Unit A A C C C V mV...
Description	QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
File Size	246.04K / 17 Page	View it Online	Download Datasheet

				IR International Rectifier
Part No.	IRFB20N50K IRFB20N50KPBF
OCR Text	... 1mA 0.25 VGS = 10V, ID = 12A 5.0 V VDS = VGS, ID = 250A 50 A VDS = 500V, VGS = 0V 250 A VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 30V nA ...6mH, RG = 25, IAS = 20A, Pulse width 400s; duty cycle 2%. 2 www.irf.com IRFB20N50K ...
Description	20 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB SMPS MOSFET HEXFET? Power MOSFET 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	113.37K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRL630S 2288 IRL630STRR IRL630STRL
OCR Text	...Continuous Drain Current, VGS @ 5.0V Continuous Drain Current, VGS @ 5.0V Pulsed Drain Current Power Dissipation Power Dissipation (PCB Moun...6mH RG = 25, IAS = 9.0A. (See Figure 12) IRL630S 100 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.75V 2....
Description	200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package From old datasheet system HEXFET? Power MOSFET
File Size	173.42K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRL630 2287
OCR Text	...ontinuous Drain Current, V GS @ 5.0V Continuous Drain Current, V GS @ 5.0V Pulsed Drain Current Power Dissipation Linear Derating Factor Gat...6mH R G = 25, IAS = 9.0A. (See Figure 12) IRL630 100 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.75V 2....
Description	200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package From old datasheet system HEXFET? Power MOSFET
File Size	148.89K / 8 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT20M16B2FLL APT20M16LFLL
OCR Text	...C = 25C Pulsed Drain Current 1 5 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...6mH, R = 25W, Peak I = 100A j G L 5 The maximum current is limited by lead temperature 6 dv/ dt numb...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	59.15K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT20M16B2LL APT20M16LLL
OCR Text	...C = 25C Pulsed Drain Current 1 5 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...6mH, R = 25W, Peak I = 100A j G L 5 The maximum current is limited by lead temperature 6 dv/ 1 Re...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	57.64K / 2 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQA8N80C
OCR Text	...d (Note 1) FQA8N80C 800 8.4 5.3 33.6 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source V...6mH, IAS = 8.4A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 8.4A, di/dt 200A/s, VDD BVDSS, Sta...
Description	800V N-Channel Advance Q-FET C-Series 800V N-Channel MOSFET From old datasheet system
File Size	600.35K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQD7P06 FQU7P06 FQD7P06TF FQD7P06TM FQU7P06TU
OCR Text	... TM Features * * * * * * -5.4A, -60V, RDS(on) = 0.45 @VGS = -10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 25 pF) Fast swi...6mH, IAS = -5.4A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -7.0A, di/dt 300A/s, VDD BVDSS, ...
Description	60V P-Channel MOSFET 60V P-Channel QFET
File Size	663.89K / 9 Page	View it Online	Download Datasheet

For 56mh Found Datasheets File :: 471 Search Time::3.078ms
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