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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RA07N4452M_06 RA07N4452M RA07N4452M06
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OCR Text |
...M
2 3
RoHS Compliance , 440-520mhz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION The RA07N4452M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 440- to 520-MHz range. The battery can... |
Description |
RoHS Compliance , 440-520mhz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO
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File Size |
91.13K /
8 Page |
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Mitsubishi Electric Semicon... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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Part No. |
RA13H4452M-E01 RA13H4452M RA13H4452M-01
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OCR Text |
520mhz 13W 12.5V MOBILE RADIO BLOCK DIAGRAM
2 3
DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain... |
Description |
440-520mhz 13W 12.5V MOBILE RADIO
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File Size |
63.54K /
9 Page |
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Mitsubishi Electric Semicon... MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RA13H4452M_06 RA13H4452M RA13H4452M-101 RA13H4452M06
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OCR Text |
...M
2 3
RoHS Compliance , 440-520mhz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be ... |
Description |
RoHS Compliance , 440-520mhz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
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File Size |
91.50K /
8 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RA30H3340M_06 RA30H3340M RA30H3340M-101 RA30H3340M06
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OCR Text |
...0 10 0 0 20 40 60 T 80 60 40
f=520mhz, VDD=12.5V, VGG=5V
Pout
80 60 40 20 0 100
20 0 100
80
80
INPUT POWER Pin (mW)
INPUT POWER Pin (mW)
TOTAL EFFICIENCY T (%)
50 40 30 20 10 0 2 2.5 3 3.5 4
Pout
100 80 T
... |
Description |
RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
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File Size |
70.27K /
7 Page |
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Mitsubishi Electric Semicon... MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RA30H4452M_06 RA30H4452M RA30H4452M-101 RA30H4452M06
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OCR Text |
...IAGRAM
RoHS Compliance , 440-520mhz 30W 12.5V MOBILE RADIO
DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly... |
Description |
RoHS Compliance , 440-520mhz 30W 12.5V MOBILE RADIO
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File Size |
70.13K /
7 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RA45H4452M_06 RA45H4452M RA45H4452M-101 RA45H4452M06
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OCR Text |
...IAGRAM
RoHS Compliance , 440-520mhz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION The RA45H4452M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be ... |
Description |
RoHS Compliance , 440-520mhz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
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File Size |
102.27K /
8 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RA60H4452M1-101 RA60H4452M1
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OCR Text |
...AM
2 3
RoHS Compliance, 440-520mhz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be... |
Description |
RoHS Compliance, 440-520mhz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
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File Size |
165.67K /
9 Page |
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it Online |
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Quanzhou Jinmei Electronic ... MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RD00HVS1 RD00HVS1-15
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OCR Text |
...5 0 5 Pin(dBm) 10 15
Ta=+25C f=520mhz Vdd=12.5V Idq=50mA Gp Po
Pin-Po CHARACTERISTICS 100 90 Pout(W) , Idd(A) 80 d(%) 70 60 50 40 30 1.4 1.2 1.0 0.8 0.6 0.4
Idd d Po
140 120
Ta=25C f=520mhz Vdd=12.5V Idq=50mA
100 80 60 40 20 0 ... |
Description |
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
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File Size |
141.85K /
6 Page |
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it Online |
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Quanzhou Jinmei Electro... MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RD02MUS1 RD02MUS1-15
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OCR Text |
... MOSFET Power Transistor 175MHz,520mhz,2W
DESCRIPTION
RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.
OUTLINE
DRAWING
4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
6.0+/-0.15
1... |
Description |
Silicon MOSFET Power Transistor 175MHz,520mhz,2W
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File Size |
237.02K /
9 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RD02MUS2
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OCR Text |
... MOSFET Power Transistor 175MHz,520mhz,2W
DESCRIPTION
RD02MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. This device have an interal monolithic zener diode from gate to source for... |
Description |
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520mhz,2W
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File Size |
239.62K /
9 Page |
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it Online |
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