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    2SD476 2SD476A 2SD476AK 2SD476K

HITACHI[Hitachi Semiconductor]
Part No. 2SD476 2SD476A 2SD476AK 2SD476K
OCR Text ...PC * Tj Tstg 1 2SD476(K) 70 50 5 4 8 40 150 -55 to +150 2SD476A(K) 70 60 5 4 8 40 150 -55 to +150 Unit V V V A A W C C 2SD476(K...Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sic...
Description Silicon NPN Triple Diffused

File Size 32.08K  /  5 Page

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    2SD655

Hitachi,Ltd.
Hitachi Semiconductor
Part No. 2SD655
OCR Text ... IC = 150 mA I C = 500 mA, IB = 50 mA*2 VCE = 1 V, IC = 150 mA*2 VCE = 1 V, IC = 150 mA Collector to emitter breakdown V(BR)CEO voltage E...Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sic...
Description Silicon NPN Epitaxial npn型硅外延

File Size 28.39K  /  6 Page

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    2SD667 2SD667A

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SD667 2SD667A
OCR Text ... 2SD667A 120 100 5 1 2 0.9 150 -50 to +150 Unit V V V A A W C C Electrical Characteristics (Ta = 25C) 2SD667 Item Collector to base brea...Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sic...
Description Silicon NPN Epitaxial npn型硅外延
Silicon NPN Transistor

File Size 31.22K  /  6 Page

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    2SD669 2SD669A SD669

HITACHI[Hitachi Semiconductor]
Part No. 2SD669 2SD669A SD669
OCR Text ... = 500 mA*2 I C = 500 mA, I B = 50 mA*2 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 150 mA*2 VCB = 10 V, IE = 0, f = 1 MHz Min 180 120 5 -- ...Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sic...
Description Silicon NPN Epitaxial

File Size 35.10K  /  7 Page

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    2SD755 2SD756 2SD756A 2SD756E 2SD755F 2SD756D

Microsemi, Corp.
HITACHI[Hitachi Semiconductor]
Part No. 2SD755 2SD756 2SD756A 2SD756E 2SD755F 2SD756D
OCR Text ... IC PC Tj Tstg 2SD755 100 100 5 50 750 150 -55 to +150 2SD756 120 120 5 50 750 150 -55 to +150 2SD756A 140 140 5 50 750 150 -55 to +150 Unit...Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sic...
Description Silicon NPN Transistor
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset 晶体管|晶体管| npn型| 120伏特五(巴西)总裁| 50mA的一(c)|2VAR
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
Silicon NPN Epitaxial
SMALL SIGNAL TRANSISTOR TO-92MOD, 3 PIN

File Size 30.52K  /  6 Page

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    Vishay
Part No. VB20100S
OCR Text ... to-220ab v20100s-e3/4w 1.88 4w 50/tube tube ito-220ab vf20100s-e3/4w 1.75 4w 50/tube tube to-263ab vb20100s-e3/4w 1.37 4w 50/tube tube to-2...europe@vishay.com www.vishay.com 3 figure 3. typical instantaneous forward characteristics figure 4...
Description High-Voltage Trench MOS Barrier Schottky Rectifier

File Size 223.82K  /  5 Page

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    Vishay
Part No. VB20120SG
OCR Text ...to-220ab v20120sg-e3/4w 1.88 4w 50/tube tube ito-220ab vf20120sg-e3/4w 1.75 4w 50/tube tube to-263ab vb20120sg-e3/4w 1.38 4w 50/tube tube to...europe@vishay.com www.vishay.com 3 figure 3. typical instantaneous forward characteristics figure 4...
Description High-Voltage Trench MOS Barrier Schottky Rectifier

File Size 214.42K  /  5 Page

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    2SD789

HITACHI[Hitachi Semiconductor]
Part No. 2SD789
OCR Text ... VEBO IC PC Tj Tstg Ratings 100 50 6 1 0.9 150 -55 to +150 Unit V V V A W C C Electrical Characteristics (Ta = 25C) Item Collector to ba...Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sic...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 30.04K  /  6 Page

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    Vishay
Part No. VB20120S
OCR Text ...ky rectifier ultra low v f = 0.50 v at i f = 5 a features ? trench mos schottky technology ? low forward voltage drop, low power losses ...europe@vishay.com document number: 88993 revision: 19-may-08 2 notes: (1) pulse test: 300 s pulse w...
Description High-Voltage Trench MOS Barrier Schottky Rectifier

File Size 221.45K  /  5 Page

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    2SD974

HITACHI[Hitachi Semiconductor]
Part No. 2SD974
OCR Text ...MHz pF I CP = 1 A, IB1 = -IB2 = 50 mA*1 Unit V V V A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 100 V, I...Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sic...
Description Silicon NPN Epitaxial

File Size 28.76K  /  6 Page

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