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  430ma Datasheet PDF File

For 430ma Found Datasheets File :: 96    Search Time::8.594ms    
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    Taiyo Yuden (U.S.A.), I...
Part No. LAN02TA1R8J
OCR Text 430ma, 50, leaded lifecycle stage standard packaging quantity (minimum) taping 2000pcs products characteristics table external dimensions (mm) lxd 3.6(max)2.4(max)mm inductance 1.8h(5%) inductance measuring frequency 7.96mhz dc resistance (...
Description Axial Leaded Inductors

File Size 124.98K  /  1 Page

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    Central Semiconductor C...
Part No. CMLDM3757-15
OCR Text ... - r ds(on) v gs =4.5v, i d =430ma - - - - 0.4 0.9 r ds(on) v gs =2.5v, i d =500ma - 0.5 0.7 - - - r ds(on) v gs =2.5v, i d =300ma - - - - 0.55 1.2 r ds(on) v gs =1.8v, i d =350ma - 0.7 0.9 - - - r ds(on) v gs =1.8v, ...
Description ENHANCEMENT-MODE COMPLEMENTARY MOSFET

File Size 1,559.67K  /  5 Page

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    Central Semiconductor C...
Part No. CMUDM8004-15
OCR Text ....1 v r ds(on) v gs =4.5v, i d =430ma 1.0 1.1 r ds(on) v gs =2.5v, i d =200ma 1.5 2.0 r ds(on) v gs =1.8v, i d =100ma 2.6 3.3 q g(tot) v ds =10v, v gs =4.5v, i d =1.0a 0.88 nc q gs v ds =10v, v gs =4.5v, i d =1.0a 0.35 n...
Description SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

File Size 389.78K  /  2 Page

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    DMC2700UDM DMC2700UDM-7

Diodes Incorporated
Part No. DMC2700UDM DMC2700UDM-7
OCR Text ... 1.3 v gs = -4.5v, i d = -430ma v gs = -2.5v, i d = -300ma v gs = -1.8v, i d = -150ma forward transfer admittance |y fs | ? -0.9 ? s v ds =10v, i d = -250ma diode forward voltage (note 5) v sd ? -0.8 -1.2 v v gs ...
Description 20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

File Size 139.99K  /  9 Page

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    Central Semiconductor C...
Part No. CMLDM5757
OCR Text ...0v, 540ma (n-channel) and 20v, 430ma (p-channel) mosfets in the miniature, sot-563 surface mount package. cmldm3737 and cmldm5757 are ideal solutions for design engineers seeking energy efficient mosfets in a small package. sot-563 n-c...
Description Dual, Complementary MOSFETs

File Size 1,067.00K  /  2 Page

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    Central Semiconductor C...
Part No. CMLDM5757-15
OCR Text ....2 v r ds(on) v gs =4.5v, i d =430ma 0.9 r ds(on) v gs =2.5v, i d =300ma 1.2 r ds(on) v gs =1.8v, i d =150ma 2.0 c rss v ds =16v, v gs =0, f=1.0mhz 20 pf c iss v ds =16v, v gs =0, f=1.0mhz 175 pf c oss v ds =16v, v...
Description SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET

File Size 1,086.28K  /  4 Page

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    DPC48-215

Superworld Electronics
Part No. DPC48-215
OCR Text ...C - V . Series 215mA . Parallel 430ma . Less Than - mA . Series 48.00V . Parallel 24.00V . Primary-1 = 151 Ohm . Primary-2 = 175 Ohm . Secondary = - Ohm . = - Ohm . DC 500V 100Meg Ohm Of More . AC 1500V 60Hz 1 Minutes . Less Than 60 Deg C ....
Description POWER TRANSFORMER

File Size 104.88K  /  1 Page

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    DMG1013UWQ-13 DMG1013UWQ-7

Diodes Incorporated
Part No. DMG1013UWQ-13 DMG1013UWQ-7
OCR Text ...nsfer characteristic i d = - 430ma i d = - 150ma 0 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 r ds(on) , drain - source on - resistance ( d , drain current (a) figure 5. typical on - resistance vs drain current and...
Description P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 261.24K  /  7 Page

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