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4 194 304 Datasheet PDF File

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				VML[Vanguard International Semiconductor]
Part No.	VG36256161A VG36256401A VG36256801A
OCR Text	...rganized as 16,777,216 - word x 4 -bit x 4 - bank, 8,388,608 - word x 8 - bit x 4 - bank, or 4,194,304 - word x 16 - bit x 4 - bank. These various organizations provide wide choice for different applications. It is designed with the state-o...
Description	CMOS Synchronous Dynamic RAM
File Size	941.72K / 69 Page	View it Online	Download Datasheet

				ETC[ETC] VML[Vanguard International Semiconductor]
Part No.	VG36641641DT VG36641641DT-6 VG36641641DT-7 VG36641641DT-7L VG36641641DT-8H VG36641641DTL-6 VG36641641DTL-7 VG36641641DTL-7L VG36641641DTL-8H VG36644080_1641DTL-7 VG36644080_1641DTL-7L VG36644080_1641DTL-8H VG36644041DT VG36644041DT-6 VG36644041DT-7 VG36644041DT-7L VG36644041DT-8H VG36644041DTL-6 VG36644041DTL-7 VG36644041DTL-7L VG36644041DTL-8H VG36648041DT VG36648041DT-6 VG36648041DT-7 VG36648041DT-7L VG36648041DT-8H VG36648041DTL-6 VG36648041DTL-7 VG36648041DTL-7L VG36648041DTL-8H VG366440_80_1641DT_L-6 VG366440_80_1641DT_L-7 VG366440_80_1641DT_L-7L VG366440_80_1641DT_L-8H
OCR Text	4 (word x bit x bank), respectively. VG36644041DT / VG36648041DT / VG36641641DT CMOS Synchronous Dynamic RAM The VG36644041D, VG366480...194,304 x 4 x 4, 2,097,152 x 8 x 4 and 1,048,576 x 16 x The synchronous DRAMs achieved high-speed...
Description	CMOS Synchronous Dynamic RAM
File Size	1,361.89K / 69 Page	View it Online	Download Datasheet

				AMD[Advanced Micro Devices]
Part No.	AM29LV64MU101RPCI AM29LV64MU101RWHI AM29LV640MU90RPCI AM29LV640MU112PCI AM29LV640MU101PCI AM29LV640MU90RWHI AM29LV640MU AM29LV640MU101RPCI AM29LV640MU101RWHI AM29LV640MU101WHI AM29LV640MU112RPCI AM29LV640MU112RWHI AM29LV640MU112WHI AM29LV640MU120PCI AM29LV640MU120RPCI AM29LV640MU120RWHI AM29LV640MU120WHI
OCR Text	...ION Am29LV640MU 64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHA...194,304 words. The device has a 16-bit only data bus, and can be programmed either in the host syste...
Description	64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with
File Size	703.76K / 58 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4E641612C-TL45 K4E661612C-TL45 K4E641612C-60 K4E641612C-TC50 K4E641612C-45 K4E641612C-50 K4E641612C-L K4E641612C-T K4E641612C-T45 K4E641612C-T50 K4E641612C-T60 K4E641612C-TC K4E641612C-TC45 K4E641612C-TC60 K4E641612C-TL50 K4E641612C-TL60 K4E661612C K4E661612C-45 K4E661612C-50 K4E661612C-60 K4E661612C-L K4E661612C-L45 K4E661612C-L50 K4E661612C-L60 K4E661612C-T K4E661612C-T45 K4E661612C-T50 K4E661612C-T60 K4E661612C-TC K4E661612C-TC45 K4E661612C-TC50 K4E661612C-TC60 K4E661612C-TL50 K4E661612C-TL60 K4E641612C
OCR Text	4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or ...
Description	4M x 16bit CMOS Dynamic RAM with Extended Data Out
File Size	882.29K / 36 Page	View it Online	Download Datasheet

				Samsung semiconductor Samsung Electronic
Part No.	K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4S641632H-TC60 K4S640832H-TC75 K4S641632H-L60 K4S640432H-TC K4S640432H-TC75 K4S640432H-L75 K4S640832H-L75 K4S641632H-L70 K4S641632H-L75 K4S640432H-TL75 K4S640832H-TL75 K4S641632H-TL60 K4S641632H-TL75
OCR Text	4 November 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 November 2003 ...194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricat...
Description	64Mb H-die SDRAM Specification
File Size	142.04K / 14 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC55NEM208AFTN70 TC55NEM208A TC55NEM208AFPN TC55NEM208AFPN55 TC55NEM208AFPN70 TC55NEM208AFTN TC55NEM208AFTN55
OCR Text	...N The TC55NEM208AFPN/AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V 10% power supply....
Description	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
File Size	105.55K / 10 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TH50VSF2580AASB TH50VSF2581AASB
OCR Text	...multi-chip package containing a 4,194,304-bit full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. The power supply for the TH50VSF2580/2581AASB can range from 2....
Description	SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
File Size	533.68K / 50 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TH50VSF3582AASB TH50VSF3583AASB
OCR Text	...bits 2,097,152 words of 16 bits 4,194,304 words of 8 bits SRAM 524,288 words of 16 bits 1,048,576 words of 8 bits 1,048,576 words of 8 bits * * * * * * * PIN ASSIGNMENT (TOP VIEW) * Case: CIOF = VCC, CIOS = VCC (x16, x16) 1 2...
Description	TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
File Size	535.38K / 50 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TH50VSF3680 TH50VSF3681AASB TH50VSF368
OCR Text	...S CIOS VCC VSS VSS Flash Memory 4,194,304 words of 16 bits 4,194,304 words of 16 bits 8,388,608 words of 8 bits SRAM 524,288 words of 16 bits 1,048,576 words of 8 bits 1,048,576 words of 8 bits * * * * * * * Function mode contro...
Description	SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
File Size	580.07K / 55 Page	View it Online	Download Datasheet

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