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Infineon
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| Part No. |
SPB80N06S2L-06
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| OCR Text |
...urn-on delay time t d(on) v dd =30v, v gs =4.5v, i d =80a, r g =1.6 - 11 17 ns rise time t r - 21 32 turn-off delay time t d(off) - 60 90 fall time t f - 20 30 gate charge characteristics gate to source charge q gs v dd =44v, i d =80... |
| Description |
N-Channel OptiMOS Power Transistor
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| File Size |
516.02K /
8 Page |
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FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
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| Part No. |
2SK3272-01 2SK3272-01L 2SK3272-01S
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| OCR Text |
...60V Tch=25C VGS=0V Tch=125C VGS=30v VDS=0V ID=40A VGS=40V ID=40A VDS=10V VDS=25V VGS=0V f=1MHz VCC=30v VGS=10V ID=80a RGS=10 Tch=25C L = 100H IF=80a VGS=0V Tch=25C IF=50A VGS=0V -dIF/dt=100A/s Tch=25C
Min. 60 2,5
Typ. 3,0 1,0 10,0 10... |
| Description |
N-channel MOS-FET
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| File Size |
202.54K /
2 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2-05 SPB80N06S2-05
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| OCR Text |
...1760 430 27 31 80 30 ns
VDD =30v, VGS =10V, ID =80a, RG =2.2
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27 53 130 5.2
36 80 170 -
nC
V(plateau) VDD =44V, ID =80a
V
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inve... |
| Description |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; NL; 5.1 mOhm
OptiMOS Power-Transistor
2.00mm Pitch DIL Female Crimp Housing, 10 10-way
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| File Size |
307.00K /
8 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06
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| OCR Text |
...ate voltage drain current
V DS=30v, VGS=0V, Tj=25C V DS=30v, VGS=0V, Tj=125C
A 0.01 10 1 1 100 100 nA m 7 6.6 5 4.6 9.5 9.2 6.2 5.9
G...80a V GS=4.5V, I D=80a, SMD version
Drain-source on-state resistance4)
V GS=10V, I D=80a V GS=10... |
| Description |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30v, D2PAk, RDSon = 5.9mOhm, 80a, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30v, TO-220, RDSon = 6.2mOhm, 80a, LL
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| File Size |
415.22K /
8 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
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| Part No. |
SPP80N06S2-05
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| OCR Text |
...-on delay time t d ( on ) v dd =30v, v gs =10v, i d =80a, r g =2.2 ? - 18 27 ns rise time t r - 126 190 turn-off delay time t d ( off ) - 54 80 fall time t f - 20 30 gate charge characteristics gate to source charge q g s v dd =44v, i ... |
| Description |
OptiMOS Power-Transistor( MOS 型功率晶体管)
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| File Size |
92.18K /
8 Page |
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it Online |
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ST Microelectronics
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| Part No. |
DMV1500M7 DMV1500M7F5
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| OCR Text |
... =1a di f /dt = -50a/ m s v r = 30v tj = 25c 110 135 ns recovery characteristics of the damper diode
? dmv1500m7 3/9 symbol parameter test...80a/ m s v fr =3v tj = 100c 570 ns v fp peak forward voltage i f =6a di f /dt = 80a/ m s tj = 100c 2... |
| Description |
DAMPER MODULATION DIODE FOR VIDEO
DAMPER MODULATION DIODE FOR VIDEO
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| File Size |
90.65K /
9 Page |
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it Online |
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Infineon
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| Part No. |
SPP80N06S2-07 SPB80N06S2-07
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| OCR Text |
...urn-on delay time t d(on) v dd =30v, v gs =10v, i d =80a, r g =3.3 - 16 24 ns rise time t r - 37 56 turn-off delay time t d(off) - 61 91 fall time t f - 36 54 gate charge characteristics gate to source charge q gs v dd =44v, i d =80a... |
| Description |
Low Voltage MOSFETs - TO220/263/262; 80a; 55V; NL; 6.6mOhm
N-Channel OptiMOS Power Transistor
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| File Size |
515.70K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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