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300us Datasheet PDF File

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				SeCoS
Part No.	SST3585
OCR Text	...on temperature. 2.pulse width 300us, dutycycle 2%. ?? ?? forward transconductance gfs s 7 v ds =5v, i d =3a _ _ _ 230 7 reverse recovery time reverse recovery charge is=3a, v gs =0v _ _ _ _ trr qrr nc ns 16 8 3.surface ...
Description	N And P-Channel Enhancement Mode Power MosFET
File Size	1,031.33K / 7 Page	View it Online	Download Datasheet

				Silicon Standard Corp.
Part No.	SSM6680GM
OCR Text	...erature of 150c. 2.pulse width <300us, duty cycle <2%. 3.mounted on a square inch of copper pad on fr4 board ; 125c/w when mounted on the minimum pad area required for soldering. converters and general load-switching circuits. the ssm6680m ...
Description	N-channel Enhancement-mode Power MOSFET
File Size	565.44K / 7 Page	View it Online	Download Datasheet

				Silicon Standard Corp.
Part No.	SSM630GP
OCR Text	...operating area. 2. pulse width <300us, duty cycle <2%. 3. starting tj = 25c, v dd =50v , l=4.5mh , r g =25w, i as =9a. converters and general load-switching circuits. t he ssm 630 gp is in to-2 20 for through-hole m ount ing where a ...
Description	N-channel Enhancement-mode Power MOSFET
File Size	596.77K / 7 Page	View it Online	Download Datasheet

				Silicon Standard
Part No.	SSM630GP
OCR Text	...operating area. 2. pulse width <300us, duty cycle <2%. 3. starting tj = 25c, v dd =50v , l=4.5mh , r g =25w, i as =9a. converters and general load-switching circuits. t he ssm 630 gp is in to-2 20 for through-hole m ount ing where a ...
Description	N-channel Enhancement-mode Power MOSFET
File Size	656.90K / 7 Page	View it Online	Download Datasheet

				LITE-ON SEMICONDUCTOR CORP
Part No.	SBG1030L SBG1025L
OCR Text	...1025l 25 17.5 25 350 notes : 1. 300us pulse width, 2% duty cycle. 2. measured at 1.0mhz and applied re verse voltage of 4.0v dc. 3.thermal resistance junction to cas e. v rms v dc v rrm i (av) i...
Description	10 A, 30 V, SILICON, RECTIFIER DIODE 10 A, 25 V, SILICON, RECTIFIER DIODE
File Size	69.30K / 2 Page	View it Online	Download Datasheet

				Continental Device India Limited
Part No.	CPBT720
OCR Text	...pulsed conditions. pulse width =300us, duty cycle=2% electrical characteristics (ta=25 deg c unless otherwise specified) description symbol test condition min typ max unit collector -base voltage vcbo ic=100ua, ie=0 40 - v collector -emitte...
Description	0.350W General Purpose PNP SMD Transistor. 40V Vceo, 1.500A Ic, 300 hFE. TRANSISTOR \| BJT \| PNP \| 35V V(BR)CEO \| 1.5A I(C) \| SOT-23
File Size	75.28K / 3 Page	View it Online	Download Datasheet

				HY ELECTRONIC
Part No.	10SQ030 10SQ035 10SQ045
OCR Text	...ion to case. -55 to+150 notes:1.300us pulse width, 2%dudy cycle. 2.measured at 1.0 mhz and applied reverse voltage of 4.0vdc. r - 6 2100 .360(9.1) .340(8.6) .052(1.3) .048(1.2) dia .360(9.1) .340(8.6) dia 1.0(25.4) min 1.0(25.4...
Description	(10SQ030 - 10SQ100) SCHOTTKY BARRIER RECTIFIERS
File Size	134.30K / 2 Page	View it Online	Download Datasheet

				Silicon Standard Corp.
Part No.	SSM09N70GP-A
OCR Text	...operating area. 2. pulse width <300us, duty cycle <2%. 3. starting tj = 25c, v dd =50v , l=6.8mh , r g =25w, i as = 9a. converters, smps and general off-line switching circuits. the ssm09n70gp-a is in to-220 for through-hole mounting where ...
Description	N-channel Enhancement-mode Power MOSFET
File Size	544.58K / 5 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnol...
Part No.	SST358510
OCR Text	...on temperature. 2.pulse width 300us, dutycycle 2%. ?? ?? forward transconductance gfs s 7 v ds =5v, i d =3a _ _ _ 230 7 reverse recovery time reverse recovery charge is=3a, v gs =0v _ _ _ _ trr qrr nc ns 16 8 3.surface ...
Description	N And P-Channel Enhancement Mode Power Mos.FET N And P-Channel Enhancement Mode Power Mos.FET
File Size	1,002.22K / 7 Page	View it Online	Download Datasheet

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