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Elite MicroPower
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| Part No. |
EMA2217
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| OCR Text |
...2 i bit 0 of gain select g1 3 i bit 1 of gain select gnd 1,11,13,20 - ground linn 5 i left channel negative differential input l...3ohm a v = 6db
preliminary ema2217 elite micropower inc. elite micropower ... |
| Description |
2-W STEREO AUDIO POWER AMPLIFIER
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| File Size |
860.32K /
17 Page |
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it Online |
Download Datasheet
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SamHop Microelectronics...
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| Part No. |
STUD410S
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| OCR Text |
...tance, junction-to-ambient r jc 3 50 r ja /w c /w c 40 parameter symbol limit unit drain-s ource voltage v ds v g ate-s ource voltage 20 v g...3ohm ns ns ns ns total g ate c harge g ate-s ource c harge gate-drain charge q g q gs q gd v ds =20v... |
| Description |
S uper high dense cell design for low R DS (ON).
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| File Size |
82.18K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STUD421S
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| OCR Text |
...5 c 70 c ta= 25 c ta=70 c 35 -8.3 a limit thermal characteristics thermal resistance, junction-to-case thermal resistance, junction-to-ambie...3ohm ns ns ns ns total g ate c harge g ate-s ource c harge gate-drain charge q g q gs q gd v ds =-24... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
116.60K /
8 Page |
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it Online |
Download Datasheet |
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Xian Semipower Electron...
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| Part No. |
SWF8N60
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| OCR Text |
3 ? )@v gs =10v gate charge ( typ 38 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produc...3ohm 1 2 3 1. gate 2. drain 3. source to - 220f 1 2 3 to - 220 1 2 3 sw8n60 samwin item sales type... |
| Description |
N-channel MOSFET
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| File Size |
477.93K /
7 Page |
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it Online |
Download Datasheet |
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