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20v s Datasheet PDF File

For 20v s Found Datasheets File :: 37626 Search Time::1.407ms
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				Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
Part No.	Fs7KM-16 Fs7KM-16A
OCR Text	...RACTERIsTICs (TYPICAL) 5 VGs = 20v 10V CAsE TEMPERATURE TC (C) OUTPUT CHARACTERIsTICs (TYPICAL) 20 PD = 40W VGE = 20v 10V 4.5V TC = ...s) TC = 25C DRAIN CURRENT ID (A) 16 3 2 100 7 5 3 2 125C 75C 12 8 4 0 0 ...
Description	MITsUBIsHI Nch POWER MOsFET HIGH-sPEED sWITCHING UsE
File Size	47.52K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	Fs7KM-18A Fs7KM-18
OCR Text	...TC = 25C Pulse Test 5 VGs = 20v TC = 25C Pulse Test VGs = 20v 10V 5V 4.5V DRAIN CURRENT ID (A) 16 PD = 40W DRAIN CURR...s) TC = 25C 75C 125C DRAIN CURRENT ID (A) 16 3 2 100 7 5 3 2 12 8 4 0 0 ...
Description	HIGH-sPEED sWITCHING UsE
File Size	41.74K / 4 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors] Fairchild Semiconductor
Part No.	Fs7KM-18 Fs7M0680TU Fs7M0680YDTU Fs7KM-18A
OCR Text	...TC = 25C Pulse Test 5 VGs = 20v TC = 25C Pulse Test VGs = 20v 10V 5V 4.5V DRAIN CURRENT ID (A) 16 PD = 40W DRAIN CURR...s) TC = 25C 75C 125C DRAIN CURRENT ID (A) 16 3 2 100 7 5 3 2 12 8 4 0 0 ...
Description	Fairchild Power switch(FPs) Nch POWER MOsFET HIGH-sPEED sWITCHING UsE
File Size	46.69K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	Fs7KM-5
OCR Text	...RACTERIsTICs (TYPICAL) 10 VGs = 20v 10V 7V PD = 30W TC = 25C Pulse Test CAsE TEMPERATURE TC (C) OUTPUT CHARACTERIsTICs (TYPICAL) 20 PD = ...s) FORWARD TRANsFER ADMITTANCE Vs.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) 8 6 3 ...
Description	HIGH-sPEED sWITCHING UsE
File Size	44.05K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA100Ts120U
OCR Text	...kage Current -- -- 250 nA VGE = 20v Dynamic Characteristics - TJ = 125C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon...s VCC = 720v di/dt1300A/s 2 www.irf.com GA100Ts120U 100 F or b oth: LOAD CURRENT (A) ...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	268.82K / 10 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	ssG4510
OCR Text	...i gss - - 100 na v gs = 20v drain-source leakage current t j =25 c i dss - - 1 a v ds =80v, v gs =0 t j =55 c - - 5 static drain-source on-resistance 2 r ds(on) - - 112 m v gs =10v, i d =2a - - 120 v...
Description	N & P-Ch Enhancement Mode Power MOsFET
File Size	1,077.48K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMN25UN
OCR Text	...drain-source voltage t j =25c --20v v gs gate-source voltage -8 - 8 v i d drain current v gs =4.5v; t amb =25c [1] --6a static characteristi...s d g mbb076 pmn25un all information provided in this document is subject to legal disclaimers. ? ...
Description	20 V, 6 A N-channel Trench MOsFET
File Size	807.63K / 16 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IHW20N65R5
OCR Text	...rent i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =20.0a - 60.0 - s integrated gate resistor r g none w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. param...
Description	high power thyristor diode
File Size	2,024.06K / 15 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IHW20N135R3
OCR Text	...rent i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =20.0a - 14.8 - s integrated gate resistor r g none w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. param...
Description	high power thyristor diode
File Size	2,205.02K / 15 Page	View it Online	Download Datasheet

For 20v s Found Datasheets File :: 37626 Search Time::1.407ms
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