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PHILIPS[Philips Semiconductors]
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| Part No. |
LC370W01
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| OCR Text |
...-
12.0 400 550 4.8 -
12.6 200 460 700 5.6 3.0
VDC mVP-P mA mA Watt A 1 2 1 3
Note : 1. The specified current and power consumption are under the VLCD=12.0V, 25 2C, fV=60Hz condition whereas mosaic pattern(8 x 6) is displayed an... |
| Description |
From old datasheet system
37.0 WXGA TFT LCD
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| File Size |
710.77K /
28 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE2378
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| OCR Text |
...- - - - - Typ 700 300 170 15 35 200 65 - Max - - - - - - - 1.8 Unit pf pf pf ns ns ns ns V
.190 (4.82)
.615 (15.62)
D .787 (20.0)
.591 (15.02)
.126 (3.22) Dia
.787 (20.0) G D S
.215 (5.47)
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| Description |
MOSFET N-Channel Enhancement Mode, High Speed Switch
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| File Size |
22.09K /
2 Page |
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it Online |
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APEX[Apex Microtechnology]
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| Part No. |
PA12A PA12
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| OCR Text |
...2 TYP 2 10 30 20 12 50 10 12 50 200 3 VS -3 100 110 108 4 20 20 MAX 6 65 200 30 500 30 PA12/PA12A 100V 15A 125W VS -3V VS 300C 200C -65 to +150C -55 to +125C MIN PA12A TYP 1 * * * 10 * * 5 * * * * * * * * * * MAX 4 40 * 20 * 20 UNITS mV V/C... |
| Description |
POWER OPERATIONAL AMPLIFIERS
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| File Size |
174.48K /
4 Page |
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it Online |
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APEX[Apex Microtechnology]
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| Part No. |
PA13A PA13
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| OCR Text |
...3 TYP 2 10 30 20 12 50 10 12 50 200 3 VS -3 100 110 108 4 20 20 PA13/PA13A 100V 15A 135W VS -3V VS 260C 175C -40 to +85C -25 to +85C PA13A TYP 1 * * * 10 * * 5 * * * * * * * * * *
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
PARAMETER INP... |
| Description |
POWER OPERATIONAL AMPLIFIERS
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| File Size |
181.53K /
4 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4650 IHP10T120
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| OCR Text |
... ns
5
50
100
150
200
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=81, Dynamic test circuit in Figure E)
RG, GATE RESISTOR F... |
| Description |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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| File Size |
331.26K /
14 Page |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
SIEMENS A G
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| Part No. |
SGW20N60 Q67040-S4236 Q67041-A4712-A2 Q67041-A4712-A4 SGB20N60 SGP20N60
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| OCR Text |
...collector current
1)
-
200
-
A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Mar-00
...120w 100W 80W 60W 40W 20W 0W 25C
IC, COLLECTOR CURRENT
50C 75C 100C 125C
Ptot, POWER DISSIPAT... |
| Description |
Fast S-IGBT in NPT-technology
Fast S-IGBT in NPT-technology 快速的S -不扩散核武器条约IGBT的技
Fast S-IGBT in NPT-technology( NPT ???涓??蹇??S-IGBT)
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| File Size |
263.73K /
12 Page |
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Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
SPP46N03 Q67040-S4145-A3 Q67040-S4742-A2 SPB46N03
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| OCR Text |
...
IS = 46 A, VDS = 24 V, di/dt = 200 A/s, Tjmax = 175 C
Gate source voltage Power dissipation
VGS Ptot T j , Tstg
20 120 -55... +175 5...120w
0.050
l h ijk g f
VGS [V] a 4.0
b c 4.5
b
c
d
e
100 90 80
0.040
... |
| Description |
N-Channel SIPMOS Power Transistor
SIPMOS-TM POWER TRANSISTOR
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| File Size |
76.94K /
9 Page |
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it Online |
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Price and Availability
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