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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N03S2L-04 SPB80N03S2L-04 SPI80N03S2L-04
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| OCR Text |
...GS=10V, I D=80A, SMD version
1current limited by bondwire ; with an RthJC = 0.8K/W the chip is able to carry ID= 163A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not s... |
| Description |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 4.2 mOhm
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LL
OptiMOS Power-Transistor
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| File Size |
417.49K /
8 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06
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| OCR Text |
...GS=10V, I D=80A, SMD version
1current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry I D= 120A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not su... |
| Description |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAk, RDSon = 5.9mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 6.2mOhm, 80A, LL
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| File Size |
415.22K /
8 Page |
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it Online |
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SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
SPP80N03 SPB80N03
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| OCR Text |
...nce
VGS = 10 V, ID = 80 A
1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air.
Semiconductor Group
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SP... |
| Description |
SIPMOS Power Transistor
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| File Size |
76.04K /
9 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N04S2-H4 SPB80N04S2-H4 SPI80N04S2-H4
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| OCR Text |
...esistance
V GS=10V, I D=80A
1current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 200A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not s... |
| Description |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - TO220/262/263; 80A; 40V; NL; 4mOhm
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| File Size |
415.24K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2-05 SPB80N06S2-05
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| OCR Text |
...GS=10V, I D=80A, SMD version
1current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 170A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not s... |
| Description |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; NL; 5.1 mOhm
OptiMOS Power-Transistor
2.00mm Pitch DIL Female Crimp Housing, 10 10-way
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| File Size |
307.00K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2-08 SPB80N06S2-08 SPI80N06S2-08
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| OCR Text |
...esistance
V GS=10V, I D=58A
1current limited by bondwire ; with an RthJC = 0.7K/W the chip is able to carry ID= 109A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not s... |
| Description |
Low Voltage MOSFETs - TO220/263/262; 80 A; 55V; NL; 8 mOhm
OptiMOS Power-Transistor
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| File Size |
419.44K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2-09 SPB80N06S2-09
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| OCR Text |
...esistance
V GS=10V, I D=50A
1current limited by bondwire ; with an RthJC = 0.8K/W the chip is able to carry ID= 99A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not su... |
| Description |
Low Voltage MOSFETs - TO220/263; 80 A; 55 V; NL; 9.1 mOhm
OptiMOS Power-Transistor
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| File Size |
315.81K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2-H5 SPB80N06S2-H5
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| OCR Text |
...esistance
V GS=10V, I D=80A
1current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 156A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not s... |
| Description |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - TO220/263; 80A; 55V; NL; 5.5mOhm
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| File Size |
307.73K /
8 Page |
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it Online |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2L-06 SPB80N06S2L-06
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| OCR Text |
...esistance
V GS=10V, I D=69A
1current limited by bondwire ; with an RthJC = 0.6K/W the chip is able to carry ID= 138A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not s... |
| Description |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 6.3 mOhm
OptiMOS Power-Transistor 的OptiMOS功率晶体
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| File Size |
309.50K /
8 Page |
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it Online |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2L-07 SPB80N06S2L-07 INFINEONTECHNOLOGIESAG-SPP80N06S2L-07
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| OCR Text |
...esistance
V GS=10V, I D=60A
1current limited by bondwire ; with an RthJC = 0.7K/W the chip is able to carry ID= 121A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not s... |
| Description |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 7 mOhm
OptiMOS Power-Transistor 的OptiMOS功率晶体
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| File Size |
308.30K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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