135-175 pdf Datasheet P8 Full Text Search --- IC-ON-LINE


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135-175 Datasheet PDF File

For 135-175 Found Datasheets File :: 13508 Search Time::1.125ms
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				Micrel Semiconductor, Inc. MICREL[Micrel Semiconductor]
Part No.	SY10H842L SY10H842LZC SY10H842LZCTR SY100H842LZC SY100H842LZCTR
OCR Text	...Reference Voltage Min. -- 0.5 2.135 1.490 1.920 Max. 225 -- 2.420 1.825 2.040 TA = +25C Min. -- 0.5 2.135 1.490 1.920 Max. 175 -- 2.420 1.825 2.040 TA = +85C Min. -- 0.5 2.135 1.490 1.920 Max. 175 -- 2.420 1.825 2.040 Unit A A V V V Conditi...
Description	3.3V SINGLE SUPPLY QUAD PECL-TO-TTL OUTPUT ENABLE 100H SERIES, LOW SKEW CLOCK DRIVER, 4 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO16
File Size	76.86K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	RA07M1317M RA07M1317M-01 RA07M1317M-E01
OCR Text	135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the ...
Description	135-175MHz 6.5W 7.2V 2 Stage Amp. For PORTABLE RADIO 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO 135-175MHz 6.5W 7.2V/ 2 Stage Amp. For PORTABLE RADIO GIGATRUE 550 CAT6 PATCH 6 FT, NON BOOT, PURPLE
File Size	61.92K / 9 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF1550FNT1 MRF1550N MRF1550NT1 MRF1550NT108
OCR Text	...nd- Full Power Across the Band: 135 - 175 MHz * 200_C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF1550NT1 MRF1550FNT1 175 M...
Description	RF Power Field Effect Transistors
File Size	503.96K / 18 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF1511T1
OCR Text	...mils, 2 oz. Copper Figure 1. 135 - 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 135 - 175 MHz 10 Pout , OUTPUT POWER (WATTS) 8 6 4 2 VDD = 7.5 V 0 0 0.1 0.2 0.3 0.4 0.5 Pin, INPUT POWER (WATTS) 0.6 0.7 -25 1 2 3 6 7 4 5 Po...
Description	RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
File Size	496.23K / 12 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF1511NT1 MRF1511T1
OCR Text	...mils, 2 oz. Copper Figure 1. 135 - 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 135 - 175 MHz 10 Pout , OUTPUT POWER (WATTS) 8 6 4 2 VDD = 7.5 V 0 0 0.1 0.2 0.3 0.4 0.5 Pin, INPUT POWER (WATTS) 0.6 0.7 -25 1 2 3 6 7 4 5 Po...
Description	RF Power Field Effect Transistor
File Size	221.01K / 12 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	NE76084 NE76084-SL NE76084-T1 NE76084-T1A
OCR Text	...: 16 GHz 6: 18 GHz 1.0 0.5 2 135 90 45 6 5 0 4 1 6 3 -0.5 -1.0 Rmax. = 1 2 -2 -90 Rmax. = 0.2 0.5 1.0 180 1 2 3 4 5 0 -135 ...175.6 170.3 164.7 158.9 152.7 146.2 139.0 131.4 123.4 114.4 MAG. 2.917 2.890 2.853 2.802 2.749 2.694...
Description	C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET C到Ku波段低噪声放大器N沟道砷化镓场效应晶体
File Size	61.06K / 12 Page	View it Online	Download Datasheet

				Cree
Part No.	C4D15120A
OCR Text	...r v rrm = 1200 v i f t c <135?c = 20 a q c = 96 nc features ? 1.2kv schottky rectifer ? zero reverse recovery current ? ...175 ?c t stg storage temperature range -55 to +135 ?c to-220 mounting torque 1 8.8 nm lbf-in m...
Description	Silicon Carbide Schottky Diode
File Size	339.42K / 5 Page	View it Online	Download Datasheet

				Philips NXP Semiconductors
Part No.	BUK9240-100A BUK9240_100A-01
OCR Text	... - Max 100 100 10 15 33 23.8 135 114 +175 +175 33 135 31 Unit V V V V A A A W C C A A mJ Source-drain diode Avalanche ruggedness [1] IDM is limited by chip, not package. 9397 750 07573 (c) Philips Electronics N.V. 20...
Description	TrenchMOS(tm) logic level FET TrenchMOS TM logic level FET From old datasheet system TrenchMOS logic level FET
File Size	109.06K / 13 Page	View it Online	Download Datasheet

				GeneSiC Semiconductor, Inc.
Part No.	GB50SLT12-CAL
OCR Text	...us forward current i f t c 135 c 50 a rms forward current i f ( rms ) t c 135 c 87 a surge non-repetitive forward current, h...175 c electrical characteristics at t j = 175 c, unless otherwise specified parameter sy...
Description	Silicon Carbide Power Schottky Diode Chip
File Size	205.91K / 3 Page	View it Online	Download Datasheet

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