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  12.2-12.8ghz Datasheet PDF File

For 12.2-12.8ghz Found Datasheets File :: 802    Search Time::2.422ms    
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    FMM5057VF

FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. FMM5057VF
OCR Text ... Symbol VDD VGG Pin Tstg Rating 12 -7 14 -55 to +125 Unit V V dBm Recommended Operating Condition Item DC Input Voltage at Tc=25 Input ...2.4 2:1 2:1 1100 5.0 50 4.0 2.6 : 1 1200 15.0 Unit V dBm mA ELECTRICAL CHARACTERISTICS (Case Tem...
Description 14 POS DUAL ROW SOCKET
7.1-8.5GHz Power Amplifier MMIC
From old datasheet system

File Size 296.99K  /  8 Page

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    FPD1500SOT89

Filtronic Compound Semiconductors
Part No. FPD1500SOT89
OCR Text ...A IGS = 1.5 mA IGD = 1.5 mA 0.7 12 12 375 42 465 750 400 1 1.0 16 16 15 1.3 550 mA mA mS A V V V 38 1.2 40 dBm 1.5 dB Symbol P1dB SSG PAE Test Conditions VDS = 5.0V; IDS = 50% IDSS VDS = 5.0V; IDS = 50% IDSS VDS = 5.0V; IDS = 50% IDSS Min 2...
Description LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT

File Size 403.26K  /  11 Page

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    HMC121G8

Hittite Microwave Corpo...
Hittite Microwave Corporation
Part No. HMC121G8
OCR Text ...ercept (two - 8 dBm signals) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 2 - 20 HMC121G8 MICROWAVE CORPORATION HMC121G8 SMT VOLTAGE-VARIABLE ATTENUATOR DC - ...
Description GaAs MMIC SMT VOLTAGE-VARIABLE ATTENUATOR DC - 8 GHz

File Size 103.43K  /  6 Page

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    PI7C8152A PI7C81552A PI7C81552 PI7C8152

Pericom Technology
ETC[ETC]
PERICOM[Pericom Semiconductor Corporation]
Part No. PI7C8152A PI7C81552A PI7C81552 PI7C8152
OCR Text ...b/s 21 Mb/s Intel 21152 10 Mb/s 12 Mb/s 10 Mb/s 11 Mb/s TEST CASE 4 Motherboard: Chipset: Processor: Memory: Video: Other PCI Devices: OS...2.8GHz with 400MHz Front Side Bus 256MB ECC DDR ATI Rage XL No other PCI devices active Windows 2000...
Description ENHANCED 2- PORT TO PCI BRIDGE INTEL 21152 COMPORISON
ENHANCED 2-PORT PCI TO PCI BRIDGE INTEL 21152 COMPARISON

File Size 116.21K  /  3 Page

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    SP8855 SP8855E

Mitel Semiconductor
MITEL[Mitel Networks Corporation]
Part No. SP8855 SP8855E
OCR Text ...on Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Description Input bus bit 10 Input bus bit 9 Input bus bit 8 Input bus bit 7 Input bus bit 6 Input bus bit 5 Input bus bit 4 Input bus bit 3 Input bus bit 2 Input bus bit 1 In...
Description 2.8GHz Parallel Load Professional Synthesiser
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test

File Size 168.71K  /  14 Page

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    MC10EL31 MC100EL31 ON0666

ONSEMI[ON Semiconductor]
Part No. MC10EL31 MC100EL31 ON0666
OCR Text ... Z = LOW to HIGH Transition 12/93 (c) Motorola, Inc. 1995 3-1 REV 2 MC10EL31 MC100EL31 DC CHARACTERISTICS (VEE = VEE(min) to VEE(max); VCC = GND) -40C Symbol IEE VEE IIH Characteristic Power Supply Current Power Supply Vol...
Description From old datasheet system
D Flip-Flop With Set and Reset

File Size 72.87K  /  3 Page

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    SA8025A SA8025ADK

PHILIPS[Philips Semiconductors]
Part No. SA8025A SA8025ADK
OCR Text ...9 10 20 19 18 17 16 15 14 13 12 11 FEATURES * Operation up to 1.8GHz at 3V * Fast locking by "Fractional-N" divider * Auxiliary syn...2.7 to 5.5V * Excellent input sensitivity: VRF_IN = -20dBm APPLICATIONS * High speed serial inpu...
Description Low-voltage 1.8GHz fractional-N synthesizer

File Size 456.88K  /  23 Page

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP280W Q62702-F1504
OCR Text ...Semiconductor Group 1 Dec-12-1996 BFP 280W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol ...2 Dec-12-1996 BFP 280W Electrical Characteristics at TA = 25C, unless otherwise specified. ...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
From old datasheet system
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

File Size 59.70K  /  7 Page

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP280 Q62702-F1378
OCR Text ...3 6 5 0.2 4 3 2 0.0 0 2 4 6 8 V 12 1 0 2 4 6 8 2V 1V 0.7V 0.1 VR mA IC 11 Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 22 10V 2V dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 18 dB 10V...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) NPN硅射频晶体管(对于低噪音,在移动通信系统的低功耗放大器
NPN Silicon RF Transistor (For low noise low-power amplifiers in mobile communication systems)
From old datasheet system

File Size 60.12K  /  7 Page

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