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  100.0a Datasheet PDF File

For 100.0a Found Datasheets File :: 1249    Search Time::1.266ms    
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    PG-TO220-3-FP IKA15N65F5

Infineon Technologies AG
Part No. PG-TO220-3-FP IKA15N65F5
OCR Text ...400v, i f =7.5a, di f /dt =1000a/s diode reverse recovery time t rr - 22 - ns diode reverse recovery charge q rr - 0.10 - c diode peak reverse recovery current i rrm - 8.6 - a diode peak rate of fall of reverse recoverycurrentduring...
Description 650V DuoPack IGBT and Diode High speed switching series fifth generation

File Size 2,468.36K  /  17 Page

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    Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
Part No. FGC1500A-130DS
OCR Text ...IT = 1500A, VD = 3000V, di/dt = 1000A/s, Tj = 115C CS= 0.2F, RS = 5 With GU-D15 (see Fig. 1, 2) IT = 1500A, VDM = 3/4 VDRM, VD = 3000V CS= 0.2F, RS= 5, VRG = 20V, Tj = 115C With GU-D15 (see Fig. 1, 5) VR = 3000V, IT = 1500A, di/dt = 1000A/s...
Description    HIGH POWER INVERTER USE PRESS PACK TYPE
HIGH POWER INVERTER USE PRESS PACK TYPE 大功率逆变器使用的新闻包装

File Size 44.56K  /  4 Page

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    TMQ80A-CL420 TMQ100A-CL420 TMQ200A-CL420 TMQ300A-CL420 TMQ400A-CL420 TMQ500A-CL420 TMQ600A-CL420 TMQ1000A-CL420

Topstek Inc.
Part No. TMQ80A-CL420 TMQ100A-CL420 TMQ200A-CL420 TMQ300A-CL420 TMQ400A-CL420 TMQ500A-CL420 TMQ600A-CL420 TMQ1000A-CL420
OCR Text 1000A-CL420 TMQ80A~1000A-CL420 Features iHighly reliable Open Loop Hall Effect device iFaster response time than temperature sensing iExcellent linearity of the output voltage over a wide input range True RMS 4-20mA Current Loop Output C...
Description Topstek True RMS Current Transducer

File Size 113.76K  /  4 Page

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    VSKDL240-06S10 VSKDL240-06S20 VSKDL240-06S30 VSKDL240-10S10 VSKDL240-10S20 VSKDL240-10S30 VSKDL240-12S10 VSKDL240-12S20

Vishay Siliconix
Part No. VSKDL240-06S10 VSKDL240-06S20 VSKDL240-06S30 VSKDL240-10S10 VSKDL240-10S20 VSKDL240-10S30 VSKDL240-12S10 VSKDL240-12S20 VSKDL240-12S30 VSKDL240-14S10 VSKDL240-14S20 VSKDL240-14S30 VSKDL240-20S10 VSKDL240-20S20 VSKDL240-20S30 VSKDL240-25S10 VSKDL240-25S20 VSKDL240-25S30
OCR Text ... C 40 50 60 70 80 90 100 IFM = 1000A 500A 200A 100A 50A 1000 TJ= 25C TJ= 150C 100 1 1.5 2 2.5 3 3.5 Instantaneous Forward Voltage (V) R ate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 13 - Forward Voltage Drop Characteristi...
Description Fast Recovery Diodes, 250 A (MAGN-A-PAKTM Power Modules)

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    POWEREX[Powerex Power Semiconductors]
Part No. FG1000BV-90DA
OCR Text ...able on-state current ..........1000A q IT(AV) Average on-state current .......................400A q VDRM Repetitive peak off state voltage ..................4500V q Anode short type 26 0.5 0.4 MIN 0.4 MIN 47 3.5 DEPTH 2....
Description HIGH POWER INVERTER USE PRESS PACK TYPE

File Size 73.72K  /  4 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FG1000BV-90DA
OCR Text ...able on-state current ..........1000A q IT(AV) Average on-state current .......................400A q VDRM Repetitive peak off state voltage ..................4500V q Anode short type 26 0.5 0.4 MIN 0.4 MIN 47 3.5 DEPTH 2....
Description HIGH POWER INVERTER USE PRESS PACK TYPE

File Size 68.65K  /  4 Page

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    WESTCODE SEMICONDUCTORS LTD
Part No. P0349LC620
OCR Text ...al. 6) v d =67% v drm , i tm =1000a, i fg =2a, t r 0.5s, t case =115c. 7) rated v drm . westcode positive development in power electronics p0349lc600 to p0349lc650 provisional data sheet. types p0349lc600 to...
Description 705 A, 6200 V, SCR

File Size 118.14K  /  10 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4706
OCR Text ... 0 3 6 9 12 15 18 irm (a) di/dt=1000a/us 125oc 125oc 25oc 25oc qrr irm 0 3 6 9 12 15 0 5 10 15 20 25 30 is (a) figure 15: diode reverse recovery time and soft coefficient vs. conduction current trr (ns) 0 0.5 1 1.5 2 2.5 s di/dt=1000a/us 12...
Description 30V N-Channel MOSFET

File Size 423.47K  /  6 Page

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    AO470610

Alpha & Omega Semiconductors
Part No. AO470610
OCR Text ... 0 3 6 9 12 15 18 irm (a) di/dt=1000a/us 125oc 125oc 25oc 25oc qrr irm 0 3 6 9 12 15 0 5 10 15 20 25 30 is (a) figure 15: diode reverse recovery time and soft coefficient vs. conduction current trr (ns) 0 0.5 1 1.5 2 2.5 s di/dt=1000a/us 12...
Description 30V N-Channel MOSFET

File Size 207.94K  /  6 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FD500JV-90DA
OCR Text ..., Tj = 125C IFM = 500A, di/dt = 1000A/s, VR = 2250V, Tj = 125C (Refer to Fig. 1 and Fig. 2) di/dt = 1000A/s, Tj = 25C Junction to fin Limits Min. -- -- -- -- -- -- -- Typ. -- -- -- 4.0 2 100 -- Max. 80 3.5 1500 -- -- -- .027 Unit mA V C J/P...
Description HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE

File Size 31.39K  /  3 Page

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