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Microsemi, Corp.
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Part No. |
APT20GF120KRG
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Description |
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-220 [K]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 20; 32 A, 1200 V, N-CHANNEL IGBT, TO-220AB
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File Size |
71.40K /
5 Page |
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it Online |
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Advanced power Technology, Ltd.
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Part No. |
APT25GT120BRG
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Description |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 25; 54 A, 1200 V, N-CHANNEL IGBT, TO-247AA
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File Size |
129.34K /
6 Page |
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it Online |
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Microsemi, Corp.
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Part No. |
APT1201R2SLL APT1201R2BLL
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Description |
12 A, 1200 V, 1.2 ohm, N-CHANNEL, Si, power, MOSFET D3PAK-3 12 A, 1200 V, 1.2 ohm, N-CHANNEL, Si, power, MOSFET, TO-247 TO-247, 3 PIN
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File Size |
61.92K /
4 Page |
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it Online |
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Microsemi, Corp. Advanced power Technology Ltd. ADPOW[Advanced power Technology]
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Part No. |
1214-300M
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Description |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF power TRANSISTOR 300 Watts - 40 volts, 150ms, 10% Radar 1200 - 1400 MHz
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File Size |
117.23K /
4 Page |
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it Online |
Download Datasheet |
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Microsemi, Corp.
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Part No. |
APT50GT120B2RDQ2G
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Description |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX™ [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL IGBT, TO-247
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File Size |
224.58K /
9 Page |
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it Online |
Download Datasheet |
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Microsemi, Corp.
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Part No. |
APT75GN120J
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Description |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
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File Size |
286.25K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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