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SGS-THOMSON
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Part No. |
2N2222A
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OCR Text |
1 a - 2 n2 2 2 2a january 1989 hig h spe ed switc he s the 2n22 18a, 2n2219a, 2n2221a and 2 n222 2a are sil icon pla nar e pitax ia l np n t...9a -2 n 222 1a -2 n 222 2a 3/8
contours of constant narrow band noise figure. switching time vs. c... |
Description |
HIGH SPEED SWITCHES
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File Size |
190.48K /
8 Page |
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WEITRON[Weitron Technology]
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Part No. |
WTD9973
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OCR Text |
1 GATE
DRAIN CURRENT 14 AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE
*Super High Dense Cell Design For Low RDS(ON) R DS(ON) <80m@V GS =10V ...9A VGS=4.5V,I D=6A Forward Transconductance VDS=10V,I D=9A BVDSS VGS(Th) IGSS 60 1.0 IDSS 25 V 3.0 1... |
Description |
Surface Mount N-Channel Enhancement Mode POWER MOSFET
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File Size |
338.61K /
6 Page |
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WEITRON[Weitron Technology]
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Part No. |
WTD9575
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OCR Text |
1 GATE
DRAIN
DRAIN CURRENT -15 AMPERES DRAIN SOURCE VOLTAGE -60 VOLTAGE
*Super High Dense Cell Design For Low RDS(ON) R DS(ON) <90m @...9A Forward Transconductance VDS=-10V,I D=-9A BVDSS VGS(Th) IGSS -60 -1.0 IDSS -25 V -3.0 100 -1 A nA... |
Description |
Surface Mount P-Channel Enhancement Mode POWER MOSFET
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File Size |
398.20K /
6 Page |
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IRF[International Rectifier]
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Part No. |
IRF7317
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OCR Text |
...G2
N -C H A N N EL M O S FET 1 8
N-Ch VDSS 20V
P-Ch -20V
2
7
3
6
4
5
P -C H AN N E L MO S FET
Description
...9A VGS = -2.7V, ID = -1.5A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 10V, ID = 6.0A VDS = ... |
Description |
6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA HEXFET Power MOSFET
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File Size |
147.74K /
10 Page |
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TY Semiconductor Co., Ltd
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Part No. |
KI4953DY
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OCR Text |
1: source 1 2: gate 1 7,8: drain 1 3: source 2 4: gate 2 5,6: drain 2 features 100% rg tested absolute maximum ratings ta = 25 symbol rating...9a 0.043 0.053 v gs =-4.5v,i d = -3.6a 0.070 0.095 forward transconductance* g fs v ds =-15v,i d = -... |
Description |
100per Rg Tested Drain-Source Voltage Vds -30V Gate-Source Voltage Vgs -20V
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File Size |
187.79K /
2 Page |
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Price and Availability
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