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1.8mh Datasheet PDF File

For 1.8mh Found Datasheets File :: 85 Search Time::1.047ms
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					Rohm
Part No.	BH76816FVM
OCR Text	...haracteristic 3 g f3 -32 db f=18mh z /100kh z frequency characteristic 4 g f4 -51 db f=23.5mh z /100kh z differential gain d g 0.5 % v o =1.0v p - p standard stair step signal differential phase d p 1.0 deg v o =1.0v p-p s...
Description	Output Capacitor-less Video Drivers
File Size	497.12K / 17 Page	View it Online	Download Datasheet

					Microsemi Corporation
Part No.	APT24F50B09
OCR Text	... starting at t j = 25c, l = 8.18mh, r g = 25 , i as = 11a. 3 pulse test: pulse width < 380s, duty cycle < 2%. 4 c o(cr) is de? ned as a ? xed capacitance with the same stored charge as c oss with v ds = 67% of v (br)dss . ...
Description	N-Channel FREDFET
File Size	111.53K / 4 Page	View it Online	Download Datasheet

					Fairchild Semiconductor
Part No.	FDP5N50NZU
OCR Text	...mum junction temperature 2. l = 18mh, i as = 3.9a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 3.9a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature typical cha...
Description	N-Channel MOSFET 500V, 3.9A, 2.0Ω
File Size	263.03K / 9 Page	View it Online	Download Datasheet

					Fairchild Semiconductor, Corp.
Part No.	IRF840S
OCR Text	...mum junction temperature (2) l=18mh, i as =8a, v dd =50v, r g =27 w , starting t j =25 c (3) i sd 8a, di/dt 160a/ m s, v dd bv dss , starting t j =25 c (4) pulse test: pulse width = 250 m s, duty cycle 2% (5) essentiall...
Description	N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为500V，导通电阻为0.85Ω，漏电流A N沟道功率MOSFET（不适用沟道增强型功率马鞍山场效应管（漏源电压为500V及导通电阻为0.85Ω，漏电流A）条
File Size	233.78K / 7 Page	View it Online	Download Datasheet

					International Rectifier
Part No.	IRL1104L IRL1104S
OCR Text	...15v, starting t j = 25c, l = 0.18mh r g = 25 w , i as = 62a. (see figure 12) ? pulse width 300s; duty cycle 2%. ** when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques...
Description	40V Single N-Channel HEXFET Power MOSFET in a TO-262 package 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	202.71K / 10 Page	View it Online	Download Datasheet

					Sumida Corporation
Part No.	RCP105
OCR Text	... 35.0 33 rcp1?5lnp-183k 183k 18mh ? 10% 100 44.0 30 rcp1?5lnp-223k 223k 22mh ? 10% 100 50.0 28 rcp1?5lnp-273k 273k 27mh ? 10% 100 70.0 24 rcp1?5lnp-333k 333k 33mh ? 10% 80 80.0 22 rcp1?5lnp-393k 393k 39mh ? 10% 80 85.0 ...
Description	POWER INDUCTORS
File Size	55.98K / 3 Page	View it Online	Download Datasheet

					CRYDOM CORP
Part No.	RM12554D
OCR Text	...10mh 124 = 12mh154 = 15mh 184 = 18mh 824 = 82mh 105 = 100mh125 = 120mh 155 = 150mh mechanical data mass 36gm approx. 26 x 26 plan x 19.5mm height 2 8 pcb foot print 1 2 3 4 5 6 7 8 9 10 11 12 rm10 inductors ? inductance range 10mh to 150mh ...
Description	1 ELEMENT, 55000 uH, GENERAL PURPOSE INDUCTOR
File Size	106.26K / 1 Page	View it Online	Download Datasheet

					Fairchild Semiconductor
Part No.	FDPF5N50NZU
OCR Text	...mum junction temperature 2. l = 18mh, i as = 3.9a, v dd = 50v, r g = 25 ? , starting t j = 25 ? c 3. i sd ?? 3.9a, di/dt ? 200a/ ? s, v dd ? bv dss , starting t j = 25 ? c 4. essentially independent of operating temperature typi...
Description	N-Channel UniFETTM II Ultra FRFETTM MOSFET 500V, 4.2A, 1.75
File Size	325.22K / 8 Page	View it Online	Download Datasheet

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