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  0.55v-vf Datasheet PDF File

For 0.55v-vf Found Datasheets File :: 410    Search Time::1.485ms    
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    KDR721S

Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
Part No. KDR721S
OCR Text ...S Low Forward Voltage : VF max=0.55V. IO=200mA recification possible. KDR721S SCHOTTKY BARRIER TYPE DIODE (CATHODE COMMAND) L E B L DIM A 2 MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-...
Description Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(CATHODE COMMAND)

File Size 381.87K  /  2 Page

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    IHW30N120R

Infineon Technologies AG
Part No. IHW30N120R
OCR Text ...e Soldering temperature, 1.6mm (0.063 in.) from case for 10s Ptot Tj Tstg IFpul s IFSM Symbol VCE IC Value 1200 60 30 90 90 Unit V A ICpul s IF 50 25 75 50 130 120 20 25 395 -40...+175 -55...+175 260 W C V VGE 1 J-STD-020 and...
Description IGBT with monolithic body diode for soft switching Applications

File Size 1,001.42K  /  12 Page

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    Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
Part No. KDR400S
OCR Text ...S Low Forward Voltage : VF max=0.55V. A G DIM A 2 MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 IO=500mA recification po...
Description Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION, SWITCHING SUPPLY)

File Size 380.95K  /  2 Page

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    1SS350

Guangdong Kexin Industrial Co.,Ltd
Part No. 1SS350
OCR Text ...ll interterminal capacitance (C=0.69pF typ). +0.1 2.4-0.1 Low forward voltage (VF=0.23V max). High breakdown voltage (VR=55V). Very small-sized package permitting the 1SS350-applied sets to be made small and slim. +0.1 1.3-0.1 1 ...
Description Sillicon Epitaxial Schottky Barrier Diode

File Size 30.72K  /  1 Page

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    ENA1161

Sanyo Semicon Device
Part No. ENA1161
OCR Text .... * Low forward voltage (VF max=0.55V). Specifications Absolute Maximum Ratings at Ta=25C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te...
Description N-Channel Silicon MOSFET, Schottky Barrier Diode, General-Purpose Switching Device Applications

File Size 63.47K  /  5 Page

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    CENTRAL[Central Semiconductor Corp]
Part No. CTLSH1-40M832D
OCR Text ... * Low Forward Voltage Drop (VF=0.55V MAX @ 1.0A) * High Thermal Efficiency * Small TLM 3x2mm case TLM832D CASE MARKING CODE: CFA APPLICATIONS: * DC/DC Converters * Reverse Battery Protection MAXIMUM RATINGS: (TA=25C) Peak Repetitive...
Description SURFACE MOUNT DUAL, HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODES

File Size 181.69K  /  2 Page

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    SBM0204R

SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
Part No. SBM0204R
OCR Text ... Schottky Barrier Diode 40V, 0.2A Rectifier Supports automatic mounting and permits SBM0204R applied sets to be made smaller. Low forward voltage (VF max=0.55V). Average output current : IO=0.2A. Specifications Absolute Maximum Ra...
Description 0.2 A, SILICON, SIGNAL DIODE
Schottky Barrier Diode 40V, 0.2A Rectifier

File Size 39.63K  /  4 Page

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    CENTRAL[Central Semiconductor Corp]
Part No. CTLSH1-40M322
OCR Text ... * Low Forward Voltage Drop (VF=0.55V Max @ 1.0A) * High Thermal Efficiency MAXIMUM RATINGS: (TA=25C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp 1ms Forward Surge Current, tp = 8ms Po...
Description SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE TINY LEADLESS MODULE

File Size 133.13K  /  2 Page

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    SBJ200-06J

Sanyo Semicon Device
Part No. SBJ200-06J
OCR Text ...re. Low forward voltage (VF typ=0.55V). High temperature operation is possible (Tj=150C). High surge breakdown voltage. Specifications Absolute Maximum Ratings at Ta=25C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reve...
Description 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
Schottky Barrier Diode (Twin Type ・ Cathode Common) 60V, 20A Rectifier

File Size 32.25K  /  3 Page

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