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0.5-12ghz Datasheet PDF File

For 0.5-12ghz Found Datasheets File :: 319 Search Time::2.218ms
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				RFMD RF Micro Devices http://
Part No.	NBB-310
OCR Text	0 Typical Applications * Narrow and Broadband Commercial and Military Radio Designs * Linear and Saturated Amplifiers Product Description ...5.08) 0.005 (0.13) Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT S...
Description	Cascadable Broadband GaAs MMIC Amplifier DC to 12 GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz
File Size	212.21K / 10 Page	View it Online	Download Datasheet

				http:// RFMD[RF Micro Devices]
Part No.	NBB-31206 NBB-312-T1 NBB-312 NBB-312-E
OCR Text	0 RoHS Compliant & Pb-Free Product Typical Applications * Narrow and Broadband Commercial and Military Radio Designs * Linear and Saturated...5 9 4 RF IN 2 3 Ground Use Ordering Information Cascadable Broadband GaAs MMIC Amplifier DC t...
Description	CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz
File Size	180.05K / 8 Page	View it Online	Download Datasheet

				http:// RF Micro Devices, Inc. RFMD[RF Micro Devices]
Part No.	NBB-312 NBB-312-E NBB-312-T1 NBB-X-K1
OCR Text	0 Typical Applications * Narrow and Broadband Commercial and Military Radio Designs * Linear and Saturated Amplifiers Product Description ...5 9 4 RF IN 2 3 Ground Use Ordering Information Cascadable Broadband GaAs MMIC Amplifier DC t...
Description	CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER Cascadable Broadband GaAs MMIC Amplifier DC to 12 GHz
File Size	207.58K / 8 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC TRANSCOM
Part No.	TC1301
OCR Text	0.8 dB Typical at 12 GHz High Associated Gain: Ga = 10 dB Typical at 12 GHz High Dynamic Range: 1 dB Compression Power P-1 = 24 dBm at 12 GH...5. 10.0 0.8 Mag Max 0.1 5 13 Swp Max 18 GHz 45 90 S11 75 105 0 12 0.2 ...
Description	Low Noise and Medium Power GaAs FETs
File Size	204.99K / 6 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FSX017LG
OCR Text	...unted on Al2O3 board (30 x 30 x 0.65mm) For reliable operation of this FET: 1. The drain - source operating voltage (VDS) should not exceed ...5 220 -65 to +175 175 Unit V V mW C C Note ELECTRICAL CHARACTERISTICS (Ambient Temperature ...
Description	General Purpose GaAs FET
File Size	76.30K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FSX017X
OCR Text	...ource Gate Rating 12 -5 1.0 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain - source operating voltage (VDS) should not exceed 8 volts. 2. The forw...
Description	GaAs FET & HEMT Chips
File Size	85.55K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FSX027WF
OCR Text	...ents should not exceed 1.4 and -0.2 mA respectively with gate resistance of 1000. 3. The operating channel temperature (Tch) should not exce...5.4mA IGS = -5.4A Min. 70 -0.7 -5.0 Limit Typ. Max. 110 100 -1.2 2.5 9.5 24.5 24.5 23.5 14.0 10.0 6....
Description	General Purpose GaAs FET
File Size	107.78K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FHX45X
OCR Text	0.55dB (Typ.)@f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg 0.15m, Wg = 280m Gold Gate Metallization for High Reliability Gate ...5 -3.0 290 -65 to +175 175 Unit V V mW C C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=...
Description	GaAs FET & HEMT Chips
File Size	57.81K / 4 Page	View it Online	Download Datasheet

				Tyco Electronics
Part No.	MA4E2099 MA4E2099-1284 MA4E2099-1284T MA4E2099-1284W
OCR Text	... Inches Millimeters Min. 0.0285 0.0285 0.0040 0.0035 0.0165 Max. 0.0297 0.0297 0.0060 0.0043 0.0173 Min. 0.725 0.725 0.102 0.09...5 mA-9.5 mA ) () Max 16 Min MA4E2099-1284 1.08 Max 1.24 Min 1.32 Max 1.52 Typ 0...
Description	High Barrier Silicon Schottky Diodes: Bridge Octoquad
File Size	92.95K / 3 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	TGA2710
OCR Text	...10 Frequency Range: 10.5 -12.0 GHz 38 dBm Nominal Output Power 19 dB Nominal Gain Bias: 7-9V, 1.4A & 1.05A (~ 2A under RF drive) 0.25 um 3MI pHEMT Technology Chip Dimensions 3.52 x 2.61 x 0.10 mm (0.139 x 0.103 x 0.004 in) Primary App...
Description	10.5 - 12GHz High Power Amplifier
File Size	187.92K / 15 Page	View it Online	Download Datasheet

For 0.5-12ghz Found Datasheets File :: 319 Search Time::2.218ms
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