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SST[Silicon Storage Technology, Inc]
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Part No. |
SST32HF64A2-70-4E-L2SE SST32HF64A2 SST32HF64A2-70-4E-L1PE
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OCR Text |
...mpt to read DQ7 will produce a `0'. Once the internal Erase operation is complete, DQ7 will produce a `1'. The Data# Polling is valid after the rising edge of the fourth WE# (or BEF#) pulse for Program operation. For Sector- or Block-Erase,... |
Description |
Multi-Purpose Flash Plus PSRAM ComboMemory
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File Size |
636.83K /
38 Page |
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it Online |
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SST[Silicon Storage Technology, Inc]
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Part No. |
SST34HF324G-70-4E-L3KE SST34HF324G SST34HF324G-70-4C-L3KE
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OCR Text |
...mpt to read DQ7 will produce a `0'. Once the internal Erase operation is completed, DQ7 will produce a `1'. The Data# Polling is valid after the rising edge of fourth WE# (or BEF#) pulse for Program operation. For Sector-, Block-, or Chip-E... |
Description |
32 Mbit Dual-Bank Flash 4 Mbit SRAM ComboMemory
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File Size |
416.71K /
30 Page |
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it Online |
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SST[Silicon Storage Technology, Inc]
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Part No. |
SST34HF32A4-70-4E-LSE SST34HF32A4 SST34HF32A4-70-4E-L1PE
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OCR Text |
... data configuration: all data I/0 pins DQ0-DQ15 are active and controlled by BEF# and OE#. If the CIOF pin is at logic "0", the device is in x8 data configuration: only data I/O pins DQ0-DQ7 are active and controlled by BEF# and OE#. The re... |
Description |
32 Mbit Concurrent SuperFlash 16 Mbit PSRAM ComboMemory
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File Size |
743.06K /
37 Page |
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it Online |
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
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Part No. |
STW6NB90
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OCR Text |
...er Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Fa... |
Description |
N-CHANNEL MOSFET N - CHANNEL 900V - 1.7ohm - 6.3A - TO-247 PowerMESH MOSFET N - CHANNEL 900V - 1.7 Ohm - 6.3A - TO-247 PowerMESH MOSFET
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File Size |
49.90K /
5 Page |
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it Online |
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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Part No. |
STW6NB100
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OCR Text |
...ter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating F ac... |
Description |
N-CHANNEL MOSFET N - CHANNEL 1000V - 2.3ohm - 5.4A - TO-247 PowerMESH MOSFET
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File Size |
85.62K /
8 Page |
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it Online |
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Price and Availability
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