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  0.0031 Datasheet PDF File

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    1N5817

Pan Jit International Inc.
Part No. 1N5817
OCR Text 0 Ampere FEATURES ! Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ! ! 1.0 ampere operation at TL=90 C with no thermal runaway Exceeds environmental standar...
Description 1 AMPERE SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere)

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    1N5817

Wing Shing Computer Components
Part No. 1N5817
OCR Text ...GE - 20 to 40 Volts CURRENT - 1.0 Ampere Case: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: MIL-STD-202E, Method 208 guaranteed Polarity: Color band denotes cathode end Mounting position: Any Weight: 0.33 gram Low switching no...
Description SCHOTTKY BARRIER RECTIFIER(VOLTAGE RANGE - 20 to 40 Volts CURRENT - 1.0 Ampere)

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    1N5817

Diodes Incorporated
Part No. 1N5817
OCR Text ...ility Classification Rating 94V-0 A B A C D DO-41 Plastic Dim Min 25.40 4.06 0.71 2.00 Max 3/4 5.21 0.864 2.72 A B C D Mechanical Data * * * * * * Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202...
Description 1.0A SCHOTTKY BARRIER RECTIFIER

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    1N964B 1N991B 1N957B 1N957B_04 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B 1N965B 1N966B 1N967B 1N968B 1N969B 1N970B 1N971

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. 1N964B 1N991B 1N957B 1N957B_04 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B 1N965B 1N966B 1N967B 1N968B 1N969B 1N970B 1N971B 1N972B 1N973B 1N974B 1N975B 1N976B 1N977B 1N978B 1N979B 1N980B 1N981B 1N982B 1N983B 1N984B 1N985B 1N986B 1N987B 1N988B 1N989B 1N990B 1N958BTR 1N958BT50A 1N958BT50R 1N960BTR 1N960BT50A 1N960BT50R 1N957BT50A 1N957BT50R 1N966BTR 1N966BT50A 1N966BT50R 1N967BS62Z 1N967BT50A 1N967BT50R 1N969BT50R 1N969BT50A 1N963BT50A 1N963BT50R 1N961BTR 1N973BT50A 1N973BT50R 1N965BTR 1N965BT50A 1N965BT50R 1N957B04
OCR Text ... Units mW mW/C C Value 500 4.0 -65 to +200 * These ratings are limiting values above which the serviceability of the diode may be impaired. DO-35 Glass case COLOR BAND DENOTES CATHODE Electrical Characteristics VZ (Volts) Devi...
Description 15V, 0.5W Zener Diode
33V, 0.5W Zener Diode
10V, 0.5W Zener Diode
12V, 0.5W Zener Diode
22V, 0.5W Zener Diode
18V, 0.5W Zener Diode
16V, 0.5W Zener Diode
6.8V, 0.5W Zener Diode
9.1V, 0.5W Zener Diode
7.5V, 0.5W Zener Diode
Half Watt Zeners
Zeners General Purpose Diodes

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    1SS356

Rohm
Part No. 1SS356
OCR Text ...ction Silicon epitaxial planar 0.30.05 +0.2 0.7 -0.1 1.250.1 2.50.2 1.70.1 !Features 1) Small surface mounting type. (UMD2) 2) High reliability. 0.1+0.1 -0.05 ROHM : UMD2 EIAJ : SC - 76 JEDEC : SOD - 323 !Absolute maximum...
Description Diodes > High Frequency Diodes > Band switching diodes

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    24C08

Microchip Technology
Part No. 24C08
OCR Text ...t was created with FrameMaker 4 0 4 24C08B/16B 1.0 1.1 ELECTRICAL CHARACTERISTICS Maximum Ratings* TABLE 1-1: Name VSS SDA SCL WP VCC A0, A1, A2 PIN FUNCTION TABLE Function Ground Serial Address/Data I/O Serial Clock Write ...
Description 8K/16K 5.0V I 2 C O Serial EEPROMs

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    SemeLAB
SEME-LAB[Seme LAB]
Part No. 2N3637CSM
OCR Text 0.51 0.10 (0.02 0.004) PNP SILICON TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 0.31 rad. (0.012) 2.54 0.13 (0.10 0.005) 3 2 1 0.76 0.15 (0.03 0.006) FEATURE...
Description PNP SILICON TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

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    SEME-LAB[Seme LAB]
Part No. 2N3637
OCR Text 0 .3 5 ) 9 .4 0 (0 .3 7 ) PNP SILICON TRANSISTOR 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) FEATURES * High Voltage Switching 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ...
Description PNP SILICON TRANSISTOR

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    2N4033CSM4

SEME-LAB[Seme LAB]
Part No. 2N4033CSM4
OCR Text ...imensions in mm (inches) 5.59 0.13 (0.22 0.005) 0.25 0.03 (0.01 0.001) 1.40 0.15 (0.055 0.006) FEATURES * CERAMIC SURFACE MOUNT HERMETIC PACKAGE * LOW WEIGHT 0.23 min. (0.009) 0.64 0.08 (0.025 0.003) 0.23 rad. (0.009) 3 ...
Description HIGH SPEED PNP MEDIUM VOLTAGE TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE

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