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California Eastern Laboratories Inc
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| Part No. |
NE5520279A-T1A
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| OCR Text |
... NEWMOS technology (NEC's 0.6 m wsi gate lateral MOSFET) and housed in a surface mount package.
APPLICATIONS
* DIGITAL CELLULAR PHONES: 3.2 V GSM/DCS1800 Class 1 Handsets * 0.7-2.5 GHz FIXED WIRELESS ACCESS * RETAIL BUSINESS RADIO * SPE... |
| Description |
Transistor - Datasheet Reference
From old datasheet system
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| File Size |
40.25K /
3 Page |
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it Online |
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NEC, Corp.
NEC Corp.
NEC[NEC]
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| Part No. |
NEZ1011-2E NEZ1414-2E
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| OCR Text |
...ture. The device incorporates a wsi (tungsten silicide) gate structure for high reliability.
FEATURES
* High Output Power : Po (1 dB) = +34.0 dBm typ. * High Linear Gain * High Efficiency : 8.5 dB typ. (NEZ1011-2E), 7.5 dB typ. (NEZ1414... |
| Description |
2W X, Ku-BAND POWER GaAs MESFET 2W的第十个Ku波段功率GaAs MESFET
2W X / Ku-BAND POWER GaAs MESFET
2W X Ku-BAND POWER GaAs MESFET
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| File Size |
79.82K /
12 Page |
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it Online |
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NEC, Corp.
NEC Corp.
NEC[NEC]
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| Part No. |
NEZ1011-8E NEZ1414-8E
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| OCR Text |
...ture. The device incorporates a wsi (tungsten silicide) gate structure for high reliability.
FEATURES
* High Output Power : Po (1 dB) = +39.5 dBm typ. * High Linear Gain * High Efficiency : 6.5 dB typ. : 25 % typ.
* Input and Output ... |
| Description |
8W X, Ku-BAND POWER GaAs MESFET 8瓦特十，KU波段功率GaAs MESFET
8W X / Ku-BAND POWER GaAs MESFET
8W X Ku-BAND POWER GaAs MESFET
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| File Size |
80.74K /
12 Page |
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it Online |
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NEC Corp.
NEC[NEC]
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| Part No. |
NES1821B-30
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| OCR Text |
...nology. The device incorporates wsi (tungsten silicide) gate for high reliability and SiO2 glassivation for
R1.2 17.40.3 8.0 2.4 SOURCE
PACKAGE DIMENSIONS (UNIT: mm)
240.3 20.4 1.00.1 GATE
surface stability.
FEATURES
* * * * *
... |
| Description |
30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
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| File Size |
44.61K /
8 Page |
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it Online |
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NEC Corp.
NEC[NEC]
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| Part No. |
NE5500179A NE5500179A-T1
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| OCR Text |
... NEWMOS technology (NEC's 0.6 m wsi gate lateral-diffusion MOS FET) and housed in a surface mount package. The device can deliver 30.0 dBm output power with 55% power added efficiency at 1.9 GHz under the 4.8 V supply voltage, or can delive... |
| Description |
SILICON POWER MOS FET
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| File Size |
64.69K /
11 Page |
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it Online |
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Price and Availability
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