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For w emboss Found Datasheets File :: 454 Search Time::0.843ms
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				http:// FILTRAN[Filtran LTD]
Part No.	843003STR10 8430 843002JT15N 843002JT4N7 843002JTR10 843002KT15N 843002KT4N7 843002KTR10 843002ST15N 843002ST4N7 843002STR10 843003JT15N 843003JT4N7 843003JTR10 843003KT15N 843003KT4N7 843003KTR10 843003ST15N 843003ST4N7
OCR Text	...1.1 0.65 B 1.9 1.15 K0 0.95 0.6 w 8 8 P 4 2 F 3.5 3.5 Unit: mm K 0.95 0.6 229 Colonnade Road, Ottawa, Ontario, Canada K2E 7K3 Tel: (613) 226-1626 Fax: (613) 226-7124 www.filtran.com An ISO 9001 Registered Company Page 4 of 4
Description	MULTILAYER Ceramic Chip Inductor
File Size	149.12K / 4 Page	View it Online	Download Datasheet

				http:// ETC[ETC]
Part No.	CM130
OCR Text	...3pF TYP. 1.2pF TYP. 520 TYP. 1 w MAX. 500M ohm MIN. 3ppm MAX. 1 x 10-2 Pa*m3 /s MAX. DC100V 15V 25C 3C Reference temperature Please specify Reference temperature -10C to +60C f/f0 delta f/f0 Tm beta Topr Tstg R1 CL C1 C0 ga...
Description	CM130
File Size	118.86K / 2 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC]
Part No.	CS10
OCR Text	...m MAX. 16pF TYP. 7.0pF MAX. 50 w 500M ohm MIN. 5ppm MAX. 1 x 10-2 Pa*m3 /s MAX. f/f0 f/f0 Torp Tstg R1 CL C0 DL IR delta f/f0 Please specify DC 100 15V 25C 3C 5ppm MAX. Drop test of 3 times on a hard board from 75cm hei...
Description	CS10
File Size	120.32K / 2 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	DBD10 DBD10C
OCR Text	... max 1.05 10 15 68 Unit V A C / w C / w 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.2 0.4 IF -- VF Average Forward Current, IO -- A 1.2 IO -- Ta 1.0 Forward Current, IF -- A 0.8 Re 0.6 Ta= 150 C sis 25C ...
Description	Diffused Junction Silicon Diode 1.0A Single-Phase Bridge Rectifier
File Size	20.37K / 3 Page	View it Online	Download Datasheet

				Fujitsu Microelectronics Fujitsu Component Limited. FUJITSU[Fujitsu Media Devices Limited] Fujitsu Limited Fujitsu, Ltd.
Part No.	FAR-C4CL-40000-M12-R FAR-C4CL FAR-C4CL-24000-K02-R FAR-C4CL-24000-K12-R FAR-C4CL-24000-M02-R FAR-C4CL-24000-M12-R FAR-C4CL-33869-K02-R FAR-C4CL-33869-K12-R FAR-C4CL-33869-M02-R FAR-C4CL-33869-M12-R FAR-C4CL-40000-K02-R FAR-C4CL-40000-K12-R FAR-C4CL-40000-M02-R
OCR Text	... 7 8 9 10 11 12 N P Q R S T U V w X Y Z 1995 1999 2003 1 2 3 4 5 6 7 8 9 10 11 12 j a b Year Month Symbol 1 2 3 4 5 r n c d e f 1996 2000 2004 6 7 8 9 10 11 12 t u 6 FAR Family (C4 series L type) s PIN ASSIGNMENT (...
Description	Piezoelectric Resonator (24 to 40 MHz) QUARTZ CRYSTAL RESONATOR, 40 MHz Piezoelectric Resonator (24 to 40 MHz) QUARTZ CRYSTAL RESONATOR, 33.869 MHz Quadruple 2-Line To 1-Line Data Selectors/Multiplexers with 3-State Outputs 16-PDIP 0 to 70 压电谐振器（240兆赫
File Size	79.73K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDR6678A
OCR Text	...0 12 (Note 1a) Units V V A w 7.5 40 1.8 1.0 0.9 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1...emboss ed Carrier Tape F852 831N F852 831N F852 831N F852 831N F852 831N Pin 1 SSOT-8 Packa...
Description	30V N-Channel PowerTrench MOSFET
File Size	330.16K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDR8305N FDR8305
OCR Text	...20 8 (Note 1a) Units V V A w C 4.5 20 0.8 -55 to +150 Power Dissipation for Single Operation Operating and Storage Junction Tempe...emboss ed Carrier Tape F852 831N F852 831N F852 831N F852 831N F852 831N Pin 1 SSOT-8 Packa...
Description	Dual N-Channel 2.5V Specified PowerTrench MOSFET
File Size	214.40K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDR8321L
OCR Text	...ture Range 0.8 -55 to 150 w C THERMAL CHARACTERISTICS RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Jun...emboss ed Carrier Tape F852 831N F852 831N F852 831N F852 831N F852 831N Pin 1 SSOT-8 Packa...
Description	P-Channel MOSFET with Gate Driver For Load Switch Application
File Size	220.04K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDR836P
OCR Text	... -6.1 A, -20 V. RDS(ON) = 0.030 w @ VGS = -4.5 V RDS(ON) = 0.040 w @ VGS = -2.5 V * * High density cell design for extremely low RDS(O...emboss ed Carrier Tape F852 831N F852 831N F852 831N F852 831N F852 831N Pin 1 SSOT-8 Packa...
Description	P-Channel 2.5V Specified MOSFET
File Size	223.47K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDR838P
OCR Text	... -20 (Note 1a) Units V V A w 8 -8 -50 1.8 1.0 0.9 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note...emboss ed Carrier Tape F852 831N F852 831N F852 831N F852 831N F852 831N Pin 1 SSOT-8 Packa...
Description	P-Channel 2.5V Specified PowerTrenchTM MOSFET
File Size	203.14K / 8 Page	View it Online	Download Datasheet

For w emboss Found Datasheets File :: 454 Search Time::0.843ms
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