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w barrier Datasheet PDF File

For w barrier Found Datasheets File :: 15251 Search Time::5.172ms
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				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-46171
OCR Text	...rage Temperature Units V V V mA w C C Absolute Maximum[1] +14 -7 -16 IDSS 2.0 175 -65 to +175 Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25C. 3. Derate at 13 mw/C for TCASE > 25C. 4. Th...
Description	2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)
File Size	39.26K / 3 Page	View it Online	Download Datasheet

				Vishay Telefunken
Part No.	BAS281 BAS283
OCR Text	...m Symbol RthJA Value 320 Unit K/w Electrical Characteristics Tj = 25_C Parameter Forward voltage g Test Conditions IF=0.1mA IF=1mA IF=15mA VR=VRmax VR=1V, f=1MHz Type Symbol VF VF VF IR CD Min Typ Max 330 410 1 200 1.6 Unit mV mV V nA p...
Description	Schottky barrier Diodes
File Size	51.36K / 4 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BAT14-03 BAT14-03w Q62702-A1103 BAT1403w
OCR Text	... + 125 C mw RthJA RthJS K/w Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Mar-01-1996 BAT 14-03w Electrical Characteristics at TA=25C, unless oth...
Description	Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) SILICON, MEDIUM barrier SCHOTTKY, X BAND, MIXER DIODE From old datasheet system
File Size	36.61K / 4 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	BAT14-098 BAT14_98 Q62702-A0960
OCR Text	... 55 ... + 150 C 770 690 K/w 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 07.94 BAT 14-098 Electrical Characteristics per D...
Description	From old datasheet system Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)
File Size	88.26K / 4 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	BAT14-099R Q62702-A0042 BAT1499R
OCR Text	...55 ... + 150 C 1020 780 K/w 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm to 0.7 mm. Semiconductor Group 1 02.96 BAT 14-099R Electrical Characteristics per...
Description	From old datasheet system Silicon Crossover Ring Quad Schottky Diode
File Size	46.76K / 2 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BAT14-099 Q62702-A3461 BAT1499
OCR Text	...55 ... + 150 C 1090 930 K/w 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm to 0.7 mm. Semiconductor Group 1 02.96 BAT 14-099 Electrical Characteristics per ...
Description	RES, SMD, 18 OHM, 5%, 1/4w, RMF Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) From old datasheet system
File Size	79.95K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BAT140 BAT140A BAT140C BAT140S
OCR Text	...ent Tamb = 65 C; Rth j-a = 80 K/w; note 1; VR(equiv) = 0.2 V; note 2 - - - PARAMETER CONDITIONS BAT140 series MIN. MAX. UNIT ...barrier diodes thermal run-away has to be considered, as in some applications, the reverse power los...
Description	Schottky barrier double diodes
File Size	71.02K / 8 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	BAT14 BAT14-013 BAT14-033 BAT14-043 BAT14-063 BAT14-073 BAT14-093 BAT14-103 BAT14-113 BAT14-123 Q62702D1346 Q62702D1345 BAT14-124 BAT14-014 BAT14-034 BAT14-044 BAT14-064 BAT14-074 BAT14-094 BAT14-104 BAT14-114
OCR Text	...6 0.48 0.44 0.45 0.46 0.48 0.50 w 3.0 4.0 3.5 4.5 4.5 5.5 6.0 7.0 8.0 3.5 4.5 4.0 5.0 5.5 6.5 7.0 8.0 9.0 3 Unit V(BR) IR VF1 VR = 2 V Forward voltage 1 IF1 = 0.01 mA BAT14-013, -014, -033, -034 BAT14-043, -044, -063, -064 BAT14-...
Description	From old datasheet system HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
File Size	77.51K / 7 Page	View it Online	Download Datasheet

				Compensated Deuices Inc... CDI-DIODE[Compensated Deuices Incorporated] CDL Compensated Devices Incorporated
Part No.	CDLL1A100 CDLL1A30 CDLL1A60 1N5819UR JV6761UR-1 JX6761UR-1 J6761UR-1 JX5819UR-1 CDLL1A20 CDLL1A40 CDLL1A50 CDLL1A80 CDLL5817 CDLL5818 CDLL5819 CDLL6760 CDLL6761 J5819UR-1 JS5819UR-1 JS6761UR-1 JV5819UR-1 CDLL6759
OCR Text	...ERMAL RESISTANCE: (ROJEC): 40 C/w maximum at L = 0 inch THERMAL IMPEDANCE: (ZOJX): 12 C/w maximum POLARITY: Cathode end is banded. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) Of this Device is Approximately +6PPM/C....
Description	1 AMP SCHOTTKY barrier RECTIFIERS Schottky barrier Rectifiers(肖特基势垒整流二极管)
File Size	33.09K / 2 Page	View it Online	Download Datasheet

				FORMOSA[Formosa MS]
Part No.	FM220-M FM280-M FM230-M FM2100-M FM240-M FM250-M FM260-M
OCR Text	...160 +150 o UNIT A A mA mA C/w pF o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR C SYMBOLS MARKI...
Description	Silicon epitaxial planer type
File Size	64.53K / 2 Page	View it Online	Download Datasheet

For w barrier Found Datasheets File :: 15251 Search Time::5.172ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |