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  v-igbt Datasheet PDF File

For v-igbt Found Datasheets File :: 10131    Search Time::1.328ms    
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    MGP7N60ED MGP7N60ED_D ON1877 ON1876

ONSEMI[ON Semiconductor]
Part No. MGP7N60ED MGP7N60ED_D ON1877 ON1876
OCR Text ...locking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient...
Description Insulated Gate Bipolar Transistor withr Anti-Parallel Diode
IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS
From old datasheet system

File Size 140.16K  /  6 Page

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    MGP7N60E

MOTOROLA[Motorola, Inc]
Part No. MGP7N60E
OCR Text ...locking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient...
Description Insulated Gate Bipolar Transistor

File Size 118.28K  /  6 Page

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    SEMIX151GB12E4S10

Semikron International
Part No. SEMIX151GB12E4S10
OCR Text ...trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognized, file no. ...igbt v ces 1200 v i c t j = 175 c t c =25c 232 a t c =80c 179 a i cnom 150 a i crm i crm = 3xi cnom...
Description Trench IGBT Modules

File Size 134.38K  /  5 Page

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    APT50GF60B2RD APT50GF60LRD

ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT50GF60B2RD APT50GF60LRD
OCR Text ...nt IC = (TC) parameter: VGE 15 V , Tj 150 C 80 W A Ptot 240 IC 60 200 50 160 40 120 30 80 20 ...IGBT A t = 2.9s p K/W IC 10 2 10 s ZthJC 10 -1 100 s 10 1 1 ms D = 0.50 ...
Description Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代

File Size 112.47K  /  7 Page

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    APT50GF60BR

ADPOW[Advanced Power Technology]
Part No. APT50GF60BR
OCR Text ...0GF60BR 90% A 10% t d (on) 90% V CC IC IC t d(off) 100uH 90% V CC 10 tr 10% tf E on E off *DRIVER SAME TYPE AS D.U.T. VCC = 0.66 VCES Ets = E on + E off A 10 IC D.U.T. V CLAMP DRIVER* tor e uc arg Ind -Ch e Pr 10% D.U.T. V CE(SAT) F...
Description Fast IGBT 600V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.

File Size 80.83K  /  5 Page

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    SEMIX151GAR12E4S10

Semikron International
Part No. SEMIX151GAR12E4S10
OCR Text ...trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognized, file no. ...igbt v ces 1200 v i c t j = 175 c t c =25c 232 a t c =80c 179 a i cnom 150 a i crm i crm = 3xi cnom...
Description Trench IGBT Modules

File Size 134.74K  /  5 Page

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    PM450CLA060

Powerex Power Semiconductors
Part No. PM450CLA060
OCR Text ...r module. type current rating v ces amperes volts (x 10) pm 450 60 outline drawing and circuit diagram v cc s i gnd gnd out f o in ...igbt inverter 450 amperes/600 volts 2 powerex, inc., 200 e. hillis street, youngwood, pennsylvania ...
Description Three Phase IGBT Inverter 450 Amperes/600 Volts

File Size 229.65K  /  6 Page

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    FMG1G100US60H

FAIRCHILD[Fairchild Semiconductor]
Part No. FMG1G100US60H
OCR Text ...ration Voltage : VCE(sat) = 2.2 V @ IC = 100A High Input Impedance Fast & Soft Anti-Parallel FWD Package Code : 7PM-GA E1/C2 Applic...IGBT T Symbol Parameter C = 25C unless otherwise noted Test Conditions Min. Typ. ...
Description IGBT
Molding Type Module

File Size 660.15K  /  9 Page

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