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Advanced Power Electronics
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| Part No. |
4501GM
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| OCR Text |
...2 3 1 25 100 13.5 770 V m m V S ua ua nA nC nC nC ns ns ns ns pF pF pF
BVDSS RDS(ON)
VGS(th) gfs IDSS
Gate Threshold Voltage Forwar...ch Electrical characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Drain-Source Bre... |
| Description |
Search --To AP4501GM
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| File Size |
238.81K /
8 Page |
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it Online |
Download Datasheet
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A-POWER[Advanced Power Electronics Corp.]
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| Part No. |
AP4575M
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| OCR Text |
...6 42 3 1 25 100 29 V V/ m m V S ua ua nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
...ch Electrical characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS BVDSS/Tj RDS(ON) VGS... |
| Description |
N AND P-chANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
127.22K /
7 Page |
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it Online |
Download Datasheet |
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Microsemi Corporation
http://
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| Part No. |
2N2221A2 2N2221AUBC 2N2222A JANS2N2222A JANS2N2222AUB 2N2222AL 2N2221AL 2N2222AuaJANTX
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| OCR Text |
...Adc, VCE = 10Vdc
2N2221A, L, ua, UB, UBC 2N2222A, L, ua, UB, UBC 2N2221A, L, ua, UB, UBC 2N2222A, L, ua, UB, UBC 2N2221A, L, ua, UB, UBC ...ch HD LC LD LL LU L1 L2 P Q TL TW r
Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52... |
| Description |
NPN SILICON SWITchING TRANSISTOR Qualified per MIL-PRF-19500/255
ELECTRICAL chARACTERISTICS (TA = 25°C, unless otherwise noted)
TEchNICAL DATA SHEET NPN SILICON SWITchING TRANSISTOR
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| File Size |
134.22K /
6 Page |
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it Online |
Download Datasheet |
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http://
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| Part No. |
AP4511GD
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| OCR Text |
...rrent v ds =35v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =28v, v gs =0v - - 25 ua i gss gate-source leakage v gs ...ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditio... |
| Description |
N AND P-chANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
152.83K /
8 Page |
View
it Online |
Download Datasheet |
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