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  to262-7 Datasheet PDF File

For to262-7 Found Datasheets File :: 322    Search Time::1.969ms    
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    Infineon Technologies
Part No. IPD26CNE8NG IPU26CNE8NG
OCR Text ...E8N PG-TO252-3 25CNE8N PG-TO262-3 26CNE8N PG-TO220-3 26CNE8N PG-TO251-3 25CNE8N Maximum ratings, at T j=25 C, unless otherwis...7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 80 8 Typ. f...
Description Power-Transistor

File Size 685.73K  /  13 Page

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    IPI90R340C3

Infineon Technologies AG
Part No. IPI90R340C3
OCR Text ...t ? worldwide best r ds,on in to262 (i 2 pak) ? ultra low gate charge coolmos? 900v is designed for: ? quasi resonant flyback / forward to...7 drain-source on-state resistance 8 typ. transfer characteristics r ds(on) =f( t j ); i d =9.2 a; ...
Description CoolMOS?/a> Power Transistor

File Size 252.19K  /  10 Page

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    IPI90R500C3

Infineon Technologies AG
Part No. IPI90R500C3
OCR Text ... Q g,typ 900 0.5 68 V nC PG-TO262 CoolMOSTM 900V is designed for: * Quasi Resonant Flyback / Forward topologies * PC Silverbox and co...7 Drain-source on-state resistance R DS(on)=f(T J); I D=6.6 A; V GS=10 V 8 Typ. transfer characte...
Description
File Size 258.26K  /  10 Page

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    IPD25CN10NG IPI26CN10NG IPP26CN10N IPP26CN10NG IPU25CN10NG IPB26CN10NG

INFINEON[Infineon Technologies AG]
Part No. IPD25CN10NG IPI26CN10NG IPP26CN10N IPP26CN10NG IPU25CN10NG IPB26CN10NG
OCR Text ...10N PG-TO252-3 25CN10N PG-TO262-3 26CN10N PG-TO220-3 26CN10N PG-TO251-3 25CN10N Maximum ratings, at T j=25 C, unless otherwis...7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 80 8 Typ. f...
Description OptiMOS?2 Power-Transistor
OptiMOS㈢2 Power-Transistor
OPTIMOS⑶2 POWER-TRANSISTOR

File Size 708.81K  /  13 Page

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    IPD25CNE8NG IPB26CNE8NG IPI26CNE8NG IPP26CNE8N IPP26CNE8NG IPU25CNE8NG

INFINEON[Infineon Technologies AG]
Part No. IPD25CNE8NG IPB26CNE8NG IPI26CNE8NG IPP26CNE8N IPP26CNE8NG IPU25CNE8NG
OCR Text ...E8N PG-TO252-3 25CNE8N PG-TO262-3 26CNE8N PG-TO220-3 26CNE8N PG-TO251-3 25CNE8N Maximum ratings, at T j=25 C, unless otherwis...7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 80 8 Typ. f...
Description OptiMOS?? Power-Transistor
OptiMOS?2 Power-Transistor
OptiMOS㈢2 Power-Transistor
OptiMOS Power-Transistor

File Size 644.71K  /  13 Page

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    IPI60R099CP

Infineon Technologies AG
Part No. IPI60R099CP
OCR Text ... g,typ 650 0.099 60 V nC PG-TO262 CoolMOS CP is designed for: * Hard switching SMPS topologies for Server and Telecon Type IPI60R0...7 Drain-source on-state resistance R DS(on)=f(T j); I D=18 A; V GS=10 V 8 Typ. transfer character...
Description CoolMOSTM Power Transistor

File Size 304.47K  /  10 Page

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    IPB26CN10N10 IPD25CN10NG

Infineon Technologies AG
Part No. IPB26CN10N10 IPD25CN10NG
OCR Text ...10N PG-TO252-3 25CN10N PG-TO262-3 26CN10N PG-TO220-3 26CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter ...7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 80 8 Typ. f...
Description OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

File Size 540.51K  /  12 Page

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    IPI08CN10NG IPB08CN10NG IPP08CN10N IPP08CN10NG

Infineon Technologies AG
Part No. IPI08CN10NG IPB08CN10NG IPP08CN10N IPP08CN10NG
OCR Text ...ing PG-TO263-3 08CN10N PG-TO262-3 08CN10N PG-TO220-3 08CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter ...7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 200 8 Typ. ...
Description OptiMOS?2 Power-Transistor
OptiMOS㈢2 Power-Transistor
OPTIMOS⑶2 POWER-TRANSISTOR

File Size 524.18K  /  11 Page

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    IPB08CN10NG10 IPI08CN10NG

Infineon Technologies AG
Part No. IPB08CN10NG10 IPI08CN10NG
OCR Text ...ing PG-TO263-3 08CN10N PG-TO262-3 08CN10N PG-TO220-3 08CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter ...7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 200 8 Typ. ...
Description OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
OptiMOS? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

File Size 406.74K  /  11 Page

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    IPI12CN10NG IPB12CN10NG IPD12CN10NG IPP12CN10N IPP12CN10NG

Infineon Technologies AG
Part No. IPI12CN10NG IPB12CN10NG IPD12CN10NG IPP12CN10N IPP12CN10NG
OCR Text ...10N PG-TO252-3 12CN10N PG-TO262-3 12CN10N PG-TO220-3 12CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter ...7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 250 8 Typ. ...
Description OptiMOS?2 Power-Transistor
OptiMOS㈢2 Power-Transistor
OPTIMOS⑶2 POWER-TRANSISTOR

File Size 624.51K  /  12 Page

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