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![EH8008ZI EH8006ZI EH8004ZI EH8012ZI EH10002ZI EH10004ZI EH10006ZI EH10008ZI EH10010ZI EH10012ZI EH80 EH8002ZI EH8010ZI](Maker_logo/microsemi_corporation.GIF)
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
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Part No. |
EH8008ZI EH8006ZI EH8004ZI EH8012ZI EH10002ZI EH10004ZI EH10006ZI EH10008ZI EH10010ZI EH10012ZI EH80 EH8002ZI EH8010ZI
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Description |
3 PHASE BRIDGE MODULES 3 PHASE, 80 A, 200 V, silicon, BRIDGE RECTIFIER DIODE 3 PHASE BRIDGE MODULES 3 PHASE, 80 A, 1200 V, silicon, BRIDGE RECTIFIER DIODE 3 PHASE BRIDGE MODULES 3 PHASE, 100 A, 1000 V, silicon, BRIDGE RECTIFIER DIODE TV 13C 13#22D SKT wALL RECP
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File Size |
79.96K /
2 Page |
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Infineon
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Part No. |
SDP10S30 SDB10S30SMD SDT10S30
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Description |
silicon carbide Schottky Diodes - 10A diode in TO220-3 package silicon carbide Schottky Diodes - 10A diode in TO263 package silicon carbide Schottky Diodes - 10A diode in TO220-2 package
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File Size |
575.47K /
9 Page |
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CREE POwER
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Part No. |
w4NRD0X-0000 w4NRD8C-U000 w4NXD8C-0000 w4NXD8C-L000 w4NXD8D-0000 w4NXD8C-S000 w4NXD8D-S000 w4NXD8G-0000 w6NRE0X-0000 w6NRD0X-0000 w6PXD3O-0000 w6NXD3L-0000 w6NXD0K-0000 w6NXD3K-0000
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Description |
Diameter: 50.8mm; LCw substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCw type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCw type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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File Size |
273.34K /
17 Page |
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it Online |
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Price and Availability
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