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For rg-8 Found Datasheets File :: 36863 Search Time::1.687ms
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				International Rectifier Seme LAB
Part No.	IRF140SMD
OCR Text	... 2% 2) @ VDD = 25V , L 0.8mH , RG = 25W , Peak IL = 22A , Starting TJ = 25C 3) @ ISD 22A , di/dt 170A/ms , VDD BVDSS , TJ 150C , SUGGES...8 2.8 1.5 400 2.9 di / dt 100A/ms VDD 50V mC PACKAGE CHARACTERISTICS Internal Drain In...
Description	N-CHANNEL POWER MOSFET
File Size	22.30K / 2 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF150SMD
OCR Text	... 2% 2) @ VDD = 25V , L 0.3mH , RG = 25W , Peak IL = 27A , Starting TJ = 25C 3) @ ISD 27A , di/dt 70A/ms , VDD BVDSS , TJ 150C , SUGGEST...8 15 125 22 65 35 190 170 130 27 108 nC nC VDS = 0.5BVDSS VDD = 50V ID = 27A RG = 2.35W ...
Description	N-CHANNEL POWER MOSFET
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1607
OCR Text	... 38V 130 --- ID = 85A ns 84 --- RG = 1.8 86 --- VGS = 10V D Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact S 7750 --- VGS = 0V 1230 --- pF VDS = 25V 310 --- = 1.0MHz, See Fig. 5 5770 --- VGS = 0V, ...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)
File Size	179.50K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1704
OCR Text	... VDD = 20V --- ID = 100A ns --- RG = 2.5 --- VGS = 10V,See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of di...8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4....
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A) POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)
File Size	100.05K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1902 IRF1B902 IRF1902TR
OCR Text	...VDD = 10V --- ID = 1.0A ns --- RG = 53 --- VGS = 4.5V --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz Source-Drain Ratings and Characteristi...8. Maximum Safe Operating Area 4 www.irf.com IRF1902 5.0 VDS 4.0 RD VGS RG D....
Description	20V Single N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=20V)
File Size	105.83K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2204
OCR Text	... VDD = 20V --- ID = 130A ns --- RG = 2.5 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S ...8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10000 TOP I D, Drain-to-Source Current (A) 1000 BOTTOM 1...
Description	40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	138.67K / 9 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	...igure 12) VDD = 125V, ID 8.1A, RG = 12, RL = 1.1 VGS = 10V, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature 2.9 - 0.32 0.48 4.3 9.1 23 31 19 24 0.45 0.68 14 35 47 29 35 S ns ns ns ns ...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB] Air Cost Control
Part No.	IRF240SMD
OCR Text	... 2% 2) @ VDD = 50V , L 1.5mH , RG = 25W , Peak IL = 22A , Starting TJ = 25C 3) @ ISD 13.9A , di/dt 150A/ms , VDD BVDSS , TJ 150C , SUGG...8.8A ID = 13.9A ID = 250mA IDS = 8.8A VDS = 0.8BVDSS TJ = 125C VGS = 20V VGS = -20V VGS = 0 VDS = 25...
Description	N.CHANNEL POWER MOSFET N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	...Figure 12) VDD = 125V, ID 14A, RG = 9.1, RL = 8.9 (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature 6.7 - 0.20 0.24 10 16 67 53 49 39 0.28 0.34 24 100 80 74 59 S ns ns ns ns nC - ...
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF250SMD
OCR Text	... 2% 2) @ VDD = 50V , L 1.5mH , RG = 25W , Peak IL = 22A , Starting TJ = 25C 3) @ ISD 22A , di/dt 190A/ms , VDD BVDSS , TJ 150C , SUGGES...8 30 115 22 60 35 190 170 130 22 88 nC nC VDS = 0.5BVDSS VDD = 100V ID = 22A RG = 2.35W ...
Description	N.CHANNEL POWER MOSFET
File Size	23.37K / 2 Page	View it Online	Download Datasheet

For rg-8 Found Datasheets File :: 36863 Search Time::1.687ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |