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Philips
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| Part No. |
TDA6120Q TDA6120Q/N2
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| OCR Text |
....3 pF C9 136 pF
MGK443
Vref rbb 1 k C12 C13 22 nF 10 F
TDA6120Q
OUTC
Rflash 147 C8 6.8 pF R3 2 M VOUT R2 100 k
Ria 22
Rf Overall gain = G int x ----Ri
Fig.5 Test circuit with gain of 40 dB.
2000 Dec 13
8
Phi... |
| Description |
TDA6120Q; Video output amplifier
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| File Size |
92.79K /
16 Page |
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Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
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| Part No. |
2SC4081 2SC2412 2SC2412K 2SC1740S 2SC5658 2SC4617 2SC4081S 2SC4081R 2SC2412KS
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| OCR Text |
...SE COLLECTOR TIME CONSTANT : Cc*rbb' (ps)
10
Cib
Ta=25C f=1MHz IE=0A IC=0A
200
Ta=25C f=32MHZ VCB=6V
100
5
50
2
Co
20
b
1
0.2 0.5 1 2 5 10 20 50
10 -0.2 -0.5 -1 -2 -5 -10
COLLECTOR TO BASE VOLTA... |
| Description |
2SC4097 / 2SC1741S
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SC-59 晶体管|晶体管|叩| 50V五（巴西）总裁| 150毫安一（c）|律师- 59
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SC-70
2SC4097 / 2SC1741S
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
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| File Size |
75.36K /
3 Page |
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it Online |
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ETC
CDIL[Continental Device India Limited]
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| Part No. |
2N3020 2N3019
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| OCR Text |
...19 Collector Base Time Constant rbb'cb'c Cob Cib NF fT IC=50mA, VCE=10V f=20MHz VCB=10V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz IC=100A, VCE=10V Rs=1K,f=1KHz IC=10mA,VCB=10V, f=4MHz f=1MHz | hfe | IC=1mA, VCE=5V, f=1KHz SYMBOL hFE* hFE* hFE* h... |
| Description |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
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| File Size |
180.96K /
4 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SC2471
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| OCR Text |
...O I EBO VCE(sat) VBE hFE fT Cob rbb'
*
2
2SC2471
DC Current Transfer Ratio vs. Collector Current Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) DC Current Transfer Ratio hFE 400 100 VCE = 10 V 80
300
6... |
| Description |
Silicon NPN Transistor
Silicon NPN Epitaxial
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| File Size |
29.94K /
7 Page |
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it Online |
Download Datasheet |
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Sanyo
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| Part No. |
2SC2814
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| OCR Text |
...ain Symbol ICBO IEBO hFE fT Cre rbb'CC NF PG VCB=10V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=1mA VCB=6V, f=1MHz VCE=6V, IC=1mA, f=31.9MHz VCE=6V, IC=1mA, f=100MHz VCE=6V, IC=1mA, f=100MHz 40* 200 0.7 320 0.95 12 3.0 25 1.2 20 Condition... |
| Description |
NPN Epitaxial Planar Silicon Transistor High-Friquency General-Purpose Amplifier Applications
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| File Size |
143.73K /
5 Page |
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it Online |
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Hitachi Semiconductor
Panasonic Semiconductor
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| Part No. |
2SC1215
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| OCR Text |
...EBO hFE VBE VCE(sat) Cre fT* PG rbb' * CC Conditions IC =100A, IE = 0 IE = 10A, IC = 0 VCB = 10V, IE = -2mA VCB = 10V, IE = -2mA IC = 10mA, IB = 1mA VCE = 10V, IC = 1mA, f = 10.7MHz VCB = 10V, IE = -15mA, f = 100MHz VCB = 10V, IE = -1mA, f ... |
| Description |
Silicon NPN epitaxial planer type
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| File Size |
61.14K /
3 Page |
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it Online |
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Price and Availability
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