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  p3db Datasheet PDF File

For p3db Found Datasheets File :: 469    Search Time::1.547ms    
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    FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
Part No. MRF6S27085H MRF6S27085HR306 MRF6S27085HSR3 MRF6S27085HR3 MRF6S27085HR3_06
OCR Text ...P1dB = 51 dBm (126.74 W) Actual p3db = 51.72 dBm (148.54 W) Ideal 7th Order Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulse CW Output Power versus Input Power D, DRAIN EFFICIENCY (%), Gps, POWER...
Description RF Power Field Effect Transistors
MRF6S27085HSR3 2600-2700 MHz, 20 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs

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    MRF5S19130HR3 MRF5S19130HSR3

Freescale (Motorola)
Freescale Semiconductor, Inc
Part No. MRF5S19130HR3 MRF5S19130HSR3
OCR Text ...4 53 52 51 50 49 48 35 36 37 38 p3db = 53.11 dBm (205.57 W) P1dB = 52.54 dBm (179.61 W) Actual VDD = 28 Vdc, IDQ = 1200 mA Pulsed CW, 8 sec (on), 1 msec (off) Center Frequency = 1960 MHz 39 40 41 42 43 44 45 Ideal Pin, INPUT POWER (dBm) ...
Description Suitable for TDMA, CDMA and multicarrier amplifier applications.

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    MRF9200LR306 MRF9200LSR3 MRF9200LR3

FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF9200LR306 MRF9200LSR3 MRF9200LR3
OCR Text ...1dB = 53.1 dBm (204.1 W) Actual p3db = 54.25 dBm (266 W) Pin, INPUT POWER (dBm) Figure 9. Pulse CW Output Power versus Input Power D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 50 VDD = 26 Vdc, IDQ = 1800 mA, f = 880 MHz N-CDMA ...
Description 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs

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    MW5IC2030MBR106 MW5IC2030MBR1 MW5IC2030GMBR1

FREESCALE[Freescale Semiconductor, Inc]
Part No. MW5IC2030MBR106 MW5IC2030MBR1 MW5IC2030GMBR1
OCR Text ... 1 msec(off) f = 1960 MHz Ideal p3db = 44.91 dBm (31 W) P1dB = 44.69 dBm (29.5 W) ARCHIVE INFORMATION Pin, INPUT POWER (dBm) Figure 9. Intermodulation Distortion Products versus Tone Spacing 30 VDD = 27 Vdc, IDQ1 = 160 mA, IDQ2 = ...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 476.07K  /  16 Page

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    MW5IC2030NBR1065 MW5IC2030MBR1 MW5IC2030GMBR1

FREESCALE[Freescale Semiconductor, Inc]
Part No. MW5IC2030NBR1065 MW5IC2030MBR1 MW5IC2030GMBR1
OCR Text ... MHz 21 22 23 24 25 26 27 Ideal p3db = 44.91 dBm (31 W) P1dB = 44.69 dBm (29.5 W) 20 Pin, INPUT POWER (dBm) Figure 9. Intermodulation Distortion Products versus Tone Spacing 30 D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) VDD = 2...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 655.13K  /  20 Page

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    MRFE6P3300HR3 MRFE6P3300HR5

Freescale Semiconductor, Inc
Part No. MRFE6P3300HR3 MRFE6P3300HR5
OCR Text ...4 35 P1dB = 55.15 dBm (327.9 W) p3db = 55.9 dBm (388.37 W) Figure 8. Intermodulation Distortion Products versus Tone Spacing P6dB = 56.28 dBm (424.38 W) Ideal Actual VDD = 32 Vdc, IDQ = 1600 mA Pulsed CW, 12 sec(on), 1% Duty Cyc...
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF6V2150NBR1 MRF6V2150NR1
OCR Text ...wer Gain versus Output Power p3db = 52.61 dBm (182.39 W) P1dB = 52.27 dBm (168.66 W) Ideal 54 52 Actual 50 VDD = 50 Vdc, IDQ = 450 mA f = 220 MHz 24 26 28 30 32 Pin, INPUT POWER (dBm) Figure 8. Third Order Intermodul...
Description RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 508.32K  /  13 Page

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    RM805-17 RM805

List of Unclassifed Manufacturers
ETC[ETC]
Part No. RM805-17 RM805
OCR Text ...ncy and high power performance (p3db_sat 35.8 dBm) into a 50 load. This device, manufactured with Skyworks' GaAs Heterojunction Bipolar Transistor (HBT) and silicon CMOS processes, provides for all positive voltage DC supply operation whi...
Description POWER AMPLIFIER MODULE FOR BROADBAND

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    AMMC-5026 AMMC-5026-W10 AMMC-5026-W50

AVAGO TECHNOLOGIES LIMITED
Part No. AMMC-5026 AMMC-5026-W10 AMMC-5026-W50
OCR Text ...S11(dB) S22(dB) 28 25 P1dB, p3db (dBm) P1dB p3db 5 GAIN (dB) 22 19 16 13 10 0 5 10 15 20 25 30 35 40 FREQUENCY (GHz) 0 -5 -10 -15 Figure 1. Gain. Figure 2. Input and Output Return Loss. Figure 3. Output Power at P1dB...
Description 2-35 GHz GaAs MMIC Traveling Wave Amplifier

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