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6P25C 0815002 E002868 T1K08TA C3843BN PE42660 ASI10655 SC4838
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  mb-11 Datasheet PDF File

For mb-11 Found Datasheets File :: 9087    Search Time::0.953ms    
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    BUK9Y07-30B

NXP Semiconductors N.V.
Part No. BUK9Y07-30B
OCR Text ...formation Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to dr...11 ID = 1 mA; VDS = VGS; Tj = 175 C; see Figure 10; see Figure 11 ID = 1 mA; VDS = VGS; Tj = -55 C; ...
Description N-channel TrenchMOS logic level FET 75 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235

File Size 171.79K  /  14 Page

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    BUJD103AD

NXP Semiconductors
Part No. BUJD103AD
OCR Text ...ter [1] Simplified outline mb Graphic symbol C B E 2 1 3 sym131 SOT428 (DPAK) [1] it is not possible to make a connectio...11 - collector-emitter cut-off VCE = 400 V; IB = 0 A; current emitter-base cut-off current collec...
Description NPN power transistor with integrated diode

File Size 279.19K  /  14 Page

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    IRF640 IRF640S

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. IRF640 IRF640S
OCR Text ...STANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MI...11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C Capacitances, Ciss, Coss, Crss ...
Description N-channel TrenchMOS transistor(N娌?? TrenchMOS ?朵?绠?
N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 93.86K  /  9 Page

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    BUK7Y102-100B

NXP Semiconductors N.V.
Part No. BUK7Y102-100B
OCR Text ...formation Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to dr...11 ID = 1 mA; VDS = VGS; Tj = -55 C; see Figure 10 ID = 1 mA; VDS = VGS; Tj = 175 C; see Figure 10 I...
Description N-channel TrenchMOS standard level FET

File Size 166.31K  /  14 Page

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    PHD36N03LT

NXP Semiconductors
Part No. PHD36N03LT
OCR Text ...information Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain 2 1 3...11 and 12 18.5 4.2 2.9 690 160 110 6 10 33 19 0.97 1.2 nC nC nC pF pF pF ns ns ns ns V Min 27 30 0.5...
Description N-channel TrenchMOS logic level FET

File Size 196.17K  /  13 Page

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    PHP18NQ11T

NXP Semiconductors
Part No. PHP18NQ11T
OCR Text ...information Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain mb D...11 A; Vsup 25 V; drain-source avalanche unclamped; tp = 0.1 ms; RGS = 50 energy All information p...
Description N-channel TrenchMOS standard level FET

File Size 195.30K  /  13 Page

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    PHD12NQ15T PHP12NQ15T PHB12NQ15T PHB12NQ15T/T3

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PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
Part No. PHD12NQ15T PHP12NQ15T PHB12NQ15T PHB12NQ15T/T3
OCR Text ...STANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MI...11 10 9 8 7 6 5 4 3 2 1 0 0 5V 4.5 V 0.2 0.4 0.6 0.8 1 1.2 1.4 Drain-Source Voltage, ...
Description N-channel TrenchMOS transistor 12.5 A, 150 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 110.51K  /  12 Page

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    BUK465-100A

NXP Semiconductors
Philips Semiconductors
Part No. BUK465-100A
OCR Text ... PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DESCRIPTION PIN CONFIGURATION mb SYMBOL d g 2 1 3 s LIMITING VA...11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C; VDS = VGS 2.4 2.2 2.0 1.8 1....
Description PowerMOS transistor

File Size 72.88K  /  7 Page

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