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				Mitsubishi Electric Semiconductor
Part No.	M52745SP M52745E
OCR Text	... VCC 12V(R) 31 OUTPUT(R) 30 EXT FEED BACK(R) 29 VCC 12V(B) 28 OUTPUT(B) 27 EXT FEED BACK(B) 26 GND FEATURES OSD BLK IN INPUT(R) VCC 12V NC INPUT(B) * * * Frequency band width: RGB.............................200MHz (at -3dB) ...
Description	From old datasheet system BUS CONTROLLED 3-CHANNEL VIDEO PREAMP FOR CRT DISPLAY MONITOR
File Size	384.93K / 21 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp.
Part No.	2SC4954 2SC4954-T1 2SC4954-T2
OCR Text	...ent Gain Gain Bandwidth Product feed-back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre \|S21e\|2 NF 7 75 12 0.3 8.5 2.5 4.0 0.5 MIN. TYP. MAX. 0.1 0.1 150 GHz pF dB dB UNIT TEST CONDITION VCB = 5 V, IE = 0 VEB = 1...
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD 高频低噪声放大器NPN硅外延晶体管微型模具
File Size	46.98K / 6 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	TEA7532 TEA7532DP TEA7532FP 1068
OCR Text	...Figure 11. - Antiacoustic feed-back system (antilarsen system) The amplifier is divided into 3 main sections. - Automatic Gain Control (AGC) - Preamplifier - Push-pull amplifier (bridge structure) a) The AGC section is used for the...
Description	From old datasheet system MONITOR AMPLIFIER
File Size	200.25K / 16 Page	View it Online	Download Datasheet


Part No.	UPC494C-A
OCR Text	...6 7 8 non-inv. input inv. input feed-back c t r t gnd c 1 non-inv. input inv. input ref out output control v cc c 2 e 2 e 1 16 15 14 13 12 11 10 9 dead-time control h h data sheet g12649ej4v0ds00 2 m m m m pc494 block diagram 12 v cc 8c ...
Description	0.25 A SWITCHING CONTROLLER, 300 kHz SWITCHING FREQ-MAX, PDIP16
File Size	156.39K / 20 Page	View it Online	Download Datasheet

				California Eastern Labs
Part No.	2SC3583
OCR Text	...9 ghz v ce = 8 v, i c = 20 ma feed-back capacitance c re ** 0.35 0.9 pf v cb = 10 v, i e = 0, f = 1.0 mhz insertion power gain s 21e 2 11 13 db v ce = 8 v, i c = 20 ma, f = 1.0 ghz maximum available gain mag 15 db v ce = 8 v, i ...
Description	MICROWAVE LOW NOISE AMPLIFIER
File Size	984.76K / 5 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp.
Part No.	2SC4957 2SC4957-T1 2SC4957-T2 2SC4957NE68539E 2SC4957R-T1 2SC4957R-T2
OCR Text	...ent Gain Gain Bandwidth Product feed-back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre \|S21e\| 2 NF 9 75 12 0.3 11 1.5 2.5 0.5 MIN. TYP. MAX. 0.1 0.1 150 GHz pF dB dB UNIT TEST CONDITION VCB = 5 V, IE = 0 VEB = 1...
Description	Microwave low-noise amplification silicon transistor HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD 高频低噪声放大器NPN硅外延晶体管4个引脚微型模 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
File Size	48.58K / 6 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	2SC4958 2SC4958-T1 2SC4958-T2
OCR Text	...ent Gain Gain Bandwidth Product Feed back Capacitance Insertion Power Gain Noise Figure 1 2 SYMBOL ICBO IEBO hFE fT Cre \|S21e\|2 NF 7 75 12 0.3 8.5 2.5 4.0 0.5 MIN. TYP. MAX. 0.1 0.1 150 GHz pF dB dB UNIT TEST CONDITION VCB = 5 V, IE = 0 V...
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
File Size	45.24K / 6 Page	View it Online	Download Datasheet

				ams AG
Part No.	AS3430 AS3430-EK-ST
OCR Text	...mechanical designs. the simpler feed-forward topology is used to effectively reduce low frequency background noise. the feed-back topology with either 1 or 2 filtering stages can be used to reduce noise for a larger frequency range, and ...
Description	Low Power Ambient Noise-Cancelling Speaker Driver
File Size	1,302.52K / 51 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SC5186-T1 2SC5186
OCR Text	... (1) Gain Bandwidth Product (2) feed-back Capacitance SYMBOL ICBO IEBO hFE \|S21e\|2 \|S21e\|2 NF NF fT fT Cre 9 7 70 8.5 6.0 10 7.5 1.3 1.3 11 9 0.4 0.8 2.0 2.0 MIN. TYP. MAX. 100 100 140 dB dB dB dB GHz GHz pF UNIT nA nA CONDITIONS VCB = 5 V,...
Description	From old datasheet system NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
File Size	57.30K / 12 Page	View it Online	Download Datasheet

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