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  edo-dram Datasheet PDF File

For edo-dram Found Datasheets File :: 1019    Search Time::1.141ms    
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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. HYB5117805BSJ-70 HYB5117805BSJ-60 HYB5117805BSJ-50 HB17805B Q67100-Q1106 HYB5117805BJ-50 HYB5117805BJ-60 HYB5117805BJ-70 HYB5117805BSJ-50- Q67100-Q1104 Q67100-Q1105
OCR Text EDO) Advanced Information * * * HYB5117805BSJ -50/-60/-70 2 097 152 words by 8-bit organization 0 to 70 C operating temperature Perf...DRAM The HYB 5117805BSJ is a 16 MBit dynamic RAM organized as 2 097 152 words by 8-bits. The HYB ...
Description From old datasheet system
2M x 8 - Bit Dynamic RAM 2k Refresh (Hyper Page Mode- EDO)

File Size 256.00K  /  25 Page

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB5118165BSJ-70 HYB5118165BSJ-60 HYB5118165BSJ-50 HYB5116165BSJ-70 HYB5116165BSJ-60 HYB5116165BSJ-50 HB18165B HYB5116165BJ-50 HYB5116165BJ-60 HYB5116165BJ-70 HYB5116165BSJ-50- Q67100-Q1109 HYB5118165BJ-50 HYB5118165BJ-60 HYB5118165BJ-70 Q67100-Q1107 Q67100-Q1108
OCR Text EDO) Advanced Information * * * HYB5116165BSJ -50/-60/-70 HYB5118165BSJ -50/-60/-70 1 048 576 words by 16-bit organization 0 to 70 C...DRAM The HYB 5116(8)165BSJ is a 16 MBit dynamic RAM organized as 1 048 576 words by 16-bits. The ...
Description -1M x 16-Bit Dynamic RAM 1k & 4k Refresh
1M x 16-Bit Dynamic RAM 1k & 4k Refresh (Hyper Page Mode- EDO)
From old datasheet system

File Size 267.19K  /  26 Page

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    HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 HYB5118165BSJ-50 HYB3118165BSJ-50 HYB3118165BSJ-60 HYB3118165BST-60 H

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 HYB5118165BSJ-50 HYB3118165BSJ-50 HYB3118165BSJ-60 HYB3118165BST-60 HB18165C HYB5118165BSJBST-50- Q67100-Q1108 Q67100-Q1107 HYB3118165BST-50 HYB5118165BSJBST-50
OCR Text EDO) Advanced Information * 1 048 576 words by 16-bit organization * 0 to 70 C operating temperature * Hyper Page Mode-EDO-operation * Perf...DRAM The HYB 5(3)118165 are 16 MBit dynamic RAMs based on die revisions "G" & "F" and organized as ...
Description 1M x 16 Bit 1k 5 V 60 ns EDO DRAM
1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM
1M x 16 Bit 1k 5 V 50 ns EDO DRAM
-1M x 16-Bit Dynamic RAM 1k Refresh
1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM
1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO)
From old datasheet system

File Size 190.36K  /  24 Page

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    S3C44B0X

SANSUNG
Samsung semiconductor
Part No. S3C44B0X
OCR Text ...manager (chip select logic, FP/ EDO/SDRAM controller), 5-channel timers with PWM, I/O ports, RTC, 8-channel 10-bit ADC, IIC-BUS interface, I...DRAM(Fast Page, EDO, and Synchronous DRAM) Fully Programmable access cycles for all memory banks. Su...
Description ARM 7TDMI
RISC MICROPROCESSOR

File Size 1,670.72K  /  424 Page

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    S3C44B0X

Samsung semiconductor
Part No. S3C44B0X
OCR Text ...troller (chip select logic, FP/ EDO/SDRAM controller) 5-ch PWM timers & 1-ch internal timerWatch Dog Timer 71 general purpose I/O ports / 8-...DRAM(Fast Page, EDO, and Synchronous DRAM) 6. Fully Programmable access cycles for all memory banks....
Description RISC MICROPROCESSOR,Chinese-Simplified datasheet
中文

File Size 190.16K  /  60 Page

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    EP7212 EP7212-CB-A EP7212-CV-A EP7212DS

CIRRUS[Cirrus Logic]
Part No. EP7212 EP7212-CB-A EP7212-CV-A EP7212DS
OCR Text ...th 16- and 32-bit-wide DRAMs -- EDO support (Fast Page Mode support for 13 MHz and 18 MHz operation only) n Memory controller -- Decodes up ...DRAM interface that allows direct connection of up to two banks of DRAM, each bank containing up to ...
Description From old datasheet system
HIGH-PERFORMANCE, LOW-POWER SYSTEM-ON-CHIP WITH LCD CONTROLLER AND DIGITAL AUDIO INTERFACE(DAI)

File Size 1,252.96K  /  136 Page

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    IS41LV16100S IS41LV16100SNBSP IS41C16100S IS41C16100SNBSP IS41C16100S-50KI IS41C16100S-50K IS41LV16100S-50TI IS41LV16100

ICSI[Integrated Circuit Solution Inc]
Part No. IS41LV16100S IS41LV16100SNBSP IS41C16100S IS41C16100SNBSP IS41C16100S-50KI IS41C16100S-50K IS41LV16100S-50TI IS41LV16100S-50T IS41LV16100S-50K IS41LV16100S-50KI IS41C16100S-45K IS41C16100S-45KI IS41C16100S-45T IS41C16100S-45TI IS41C16100S-50T IS41C16100S-50TI IS41C16100S-60K IS41C16100S-60KI IS41C16100S-60T IS41C16100S-60TI IS41LV16100S-60TI IS41LV16100S-45K IS41LV16100S-45KI IS41LV16100S-45T IS41LV16100S-45TI IS41LV16100S-60K IS41LV16100S-60KI IS41LV16100S-60T
OCR Text EDO PAGE MODE FEATURES * Extended Data-Out (EDO) Page Mode access cycle * TTL compatible inputs and outputs; tristate I/O * Refresh Interv...DRAM optimized for high-speed bandwidth, low power applications. During READ or WRITE cycles, each b...
Description 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE [ICSI]

File Size 530.28K  /  20 Page

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    M30802FCGP M30802MC M30802MC-XXXGP M30802SGP M30805MG-XXXGP M30805FGGP M30805SGP

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M30802FCGP M30802MC M30802MC-XXXGP M30802SGP M30805MG-XXXGP M30805FGGP M30805SGP
OCR Text ......................... Used for EDO, FP, CAS before RAS refresh, self-refresh * A-D converter ....................................... 10 bit...DRAM Controller ......................................... 179 Protection ..............................
Description SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

File Size 4,585.21K  /  315 Page

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    AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC AS4C256K16E0-50JC AS4C256K16E0-50TC AS4C256K16E0-35 AS4C256K16E0-50 AS4

Alliance Semiconductor Corporation
ALSC
Part No. AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC AS4C256K16E0-50JC AS4C256K16E0-50TC AS4C256K16E0-35 AS4C256K16E0-50 AS4C256K16E0-30
OCR Text EDO) Features * Organization: 262,144 words x 16 bits * High speed - 30/35/50 ns RAS access time - 16/18/25 ns column address access time -...DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanced CMOS techn...
Description 5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time
5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
5V 256KX16 CMOS DRAM (EDO)
5V 256K?6 CMOS DRAM (EDO)
x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO)
5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time

File Size 516.95K  /  24 Page

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    AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-25TC AS4C256K16F0-25TI AS4C256K16F0-30JC AS4C256K16F0-30JI AS4C256K16F0

Alliance Semiconductor Corporation
Part No. AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-25TC AS4C256K16F0-25TI AS4C256K16F0-30JC AS4C256K16F0-30JI AS4C256K16F0-30TC AS4C256K16F0-30TI AS4C256K16F0-35JC AS4C256K16F0-35JI AS4C256K16F0-35TC AS4C256K16F0-35TI AS4C256K16F0-50JC AS4C256K16F0-50JI AS4C256K16F0-50TC AS4C256K16F0-50TI AS4C256K16FO-50JI AS4C256K16FO-50TI AS4C256K16FO AS4C256K16FO-50JC AS4C256K16FO-50TC
OCR Text ...ead or write cycle time Minimum EDO page mode cycle time Maximum operating current Maximum CMOS standby current 4/11/01; V.0.9.1 ASC256K...DRAM) device organized as 262,144 words x 16 bits. The AS4C256K16FO is fabricated with advanced CMOS...
Description 5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time

File Size 506.89K  /  25 Page

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For edo-dram Found Datasheets File :: 1019    Search Time::1.141ms    
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