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Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
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| Part No. |
IC43R32400 IC43R32400-5BG IC43R32400-4B IC43R32400-4BG IC43R32400-5B
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| OCR Text |
...ite cycle. DM3 masks DQ31-DQ24, DM2 masks DQ23DQ16, DM1 masks DQ15-DQ8, and DM0 masks DQ7-DQ0. DQ0-DQ31 Input/Output Data I/O:The DQ0-DQ31 i...0.5 x VDDQ No Connect: These pins should be left unconnected.
Note: The timing reference point fo... |
| Description |
DYNAMIC RAM
1M x 32 Bit x 4 Banks (128-MBIT) DDR SDRAM
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| File Size |
3,706.51K /
18 Page |
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it Online |
Download Datasheet
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Samsung Electronics Inc
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| Part No. |
K4D623238B-QC45
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| OCR Text |
...
DQ21
DQ22
DQ23
DM0
DM2
BA0
VSS
CAS
RAS
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
PIN DESCRIPTION
CK,CK CK...0 when DM is high in burst write. DM0 for DQ0 ~ DQ7, DM1 for DQ8 ~ DQ15, DM2 for DQ16 ~ DQ23, DM3 fo... |
| Description |
IC,SDRAM,DDR,4X512KX32,CMOS,TQFP,100PIN,PLASTIC
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| File Size |
147.89K /
17 Page |
View
it Online |
Download Datasheet |
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
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| Part No. |
M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_CC M470T6554BZ3-LD5_CC M470T2953BY0-LD5_CC M470T3354BG0-CD5_CC M470T3354BG3-CD5_CC M470T3354BGZ0-CD5_CC M470T3354BGZ3-CD5_CC M470T2953BSY3-CD5_CC M470T3354BZ0-LD5_CC M470T3354BZ3-LD5_CC M470T2953BY3-LD5_CC M470T2953BS3-CD5_CC M470T2953BSY0-CD5_CC M470T2953BXX M470T2953BY0 M470T2953BY0-LD5/CC M470T3354BZ0-LD5/CC M470T6554BZ0-LD5/CC M470T2953BS0-CD5/CC M470T3354BG0-CD5/CC M470T6554BG0-CD5/CC M470T3354BZ3-LD5/CC M470T2953BY3-LD5/CC M470T6554BZ3-LD5/CC M470T3354BG3-CD5/CC M470T6554BG3-CD5/CC M470T2953BSY0-CD5/CC M470T2953BSY3-CD5/CC M470T2953BS3-CD5/CC M470T3354BGZ0-CD5/CC M470T3354BGZ3-CD5/CC M470T6554BGZ3-CD5/CC M470T6554BGZ0-CD5/CC
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| OCR Text |
... 88 90 92 94 96 98 100
Back
DM2 VSS DQ22 DQ23 VSS DQ28 DQ29 VSS DQS3 DQS3 VSS DQ30 DQ31 VSS NC/CKE1 VDD NC NC VDD A11 A7 A6 VDD A4 A2
...0 is selected by S0, Rank 1 is selected by S1. Ranks are also called "Physical banks". When sampled ... |
| Description |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
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| File Size |
325.20K /
19 Page |
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it Online |
Download Datasheet |
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Price and Availability
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