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  diode-30v Datasheet PDF File

For diode-30v Found Datasheets File :: 19211    Search Time::2.516ms    
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    AO4728L

Alpha & Omega Semiconductors
Part No. AO4728L
OCR Text ...olithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ideally suited for use as a low side switch in CPU core power conversion. Features VDS (V) = 30V ID = 20A RDS(ON) < 4.3m RDS(ON) < 6m...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 164.44K  /  7 Page

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    AOTF470

Alpha & Omega Semiconductors
Part No. AOTF470
OCR Text ...VDS=5V, ID=50A Transconductance Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input C...30V ID=30A Capacitance (nF) 1 Coss Crss 0.1 10 Ciss 8 VGS (Volts) 6 4 2 0 0 40 80 ...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 71.27K  /  5 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO6420
OCR Text ...c t d(on) 5.1 7 ns maximum body-diode continuous current dynamic parameters total gate charge input capacitance drain-source breakdown volta...30v, i d =4.2a v gs =0v, v ds =30v, f=1mhz v gs =0v, v ds =0v, f=1mhz switching parameters reverse t...
Description 60V N-Channel MOSFET

File Size 203.80K  /  4 Page

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    AUIRF1010EZ AUIRF1010EZL AUIRF1010EZS AUIRF1010EZSTRL AUIRF1010EZSTRR

International Rectifier
List of Unclassifed Man...
Part No. AUIRF1010EZ AUIRF1010EZL AUIRF1010EZS AUIRF1010EZSTRL AUIRF1010EZSTRR
OCR Text ...Hz VGS = 0V, VDS = 0V to 48V Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Sourc...30V di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) f f...
Description HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
AUTOMOTIVE GRADE

File Size 376.06K  /  15 Page

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    STD60NH03L06 STD60NH03LT4 D60NH03L STD60NH03L STD60NH03L-1

STMICROELECTRONICS[STMicroelectronics]
Part No. STD60NH03L06 STD60NH03LT4 D60NH03L STD60NH03L STD60NH03L-1
OCR Text ...2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 30A, VGS = 0 32 51 3.2 Test conditions Min. Typ. Max. 60 240 1.3 Unit A A V ns nC A Reverse recovery time ISD = ...
Description N-channel 30V - 0.0075ohm - 60A - DPAK/IPAK STripFET TM III Power MOSFET

File Size 473.94K  /  16 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO5800E
OCR Text ... gs =10v, v ds =5v maximum body-diode continuous current switching parameters v ds =5v, i d =0.4a i s =0.1a,v gs =0v turn-off delaytime v gs =10v, v ds =30v, r l =75 ? , r gen =3 ? turn-off fall time output capacitance turn-on delaytime in...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 389.48K  /  4 Page

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    AO4260

Alpha & Omega Semiconductors
Part No. AO4260
OCR Text ...d =16a forward transconductance diode forward voltage turn-on rise time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v =10v, v =30v, r =1.67 w , reverse transfer capacitance...
Description 60V N-Channel MOSFET

File Size 335.88K  /  6 Page

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    STD17NF03L07 STD17NF03LT4 D17NF03L STD17NF03L STD17NF03L-1

STMICROELECTRONICS[STMicroelectronics]
Part No. STD17NF03L07 STD17NF03LT4 D17NF03L STD17NF03L STD17NF03L-1
OCR Text ... Ptot dv/dt(2) EAS (3) Peak diode recovery avalanche energy Single pulse avalanche energy Storage temperature Tstg Tj 1. Pulse width limited by safe operating area. 2. ISD 17A, di/dt 300A/s, VDD =V(BR)DSS, Tj TJMAX 3. Starting Tj...
Description N-channel 30V - 0.038ohm - 17A - DPAK/IPAK STripFET TM II Power MOSFET

File Size 287.16K  /  14 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4260
OCR Text ...d =16a forward transconductance diode forward voltage turn-on rise time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v =10v, v =30v, r =1.67 w , reverse transfer capacitance...
Description 60V N-Channel MOSFET

File Size 271.28K  /  6 Page

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    AP4563GH

Advanced Power Electronics Corp.
Part No. AP4563GH
OCR Text ... 2 1100 1760 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=20A, VGS=0V IS=20A, VGS=0V d...30V VGS=-4.5V VDS=-20V ID=-1A RG=3.3,VGS=-10V RD=20 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source...
Description 30V N-Channel PowerTrench MOSFET
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 81.29K  /  7 Page

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