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  di-510 Datasheet PDF File

For di-510 Found Datasheets File :: 1807    Search Time::1.187ms    
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    MN673273

PANASONIC[Panasonic Semiconductor]
Part No. MN673273
OCR Text ...5 HSSFIX CLKRST VDD1 VSS1 MS CS DI DO SCLK LOAD ADTOPADJ CPOB VD HD HCLR (TOP VIEW) 3 MN673273 I Pin Descriptions Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Pin Name TE...
Description From old datasheet system
Signal-Processing LSI for Multimedia Camera

File Size 496.62K  /  13 Page

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    IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20MD-STRL

IRF[International Rectifier]
Part No. IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20MD-STRL
OCR Text ... LE Cies Coes Cres trr Irr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (t...510 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 3.7 ---...
Description 600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB

File Size 199.42K  /  11 Page

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    IRG4BC20MD

IRF[International Rectifier]
Part No. IRG4BC20MD
OCR Text ... LE Cies Coes Cres trr Irr Q rr di(rec)M /dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (...510 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 3.7 ---...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)

File Size 221.01K  /  10 Page

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    IRLL024N IRLL024NPBF IRLL024NTR

IRF[International Rectifier]
Part No. IRLL024N IRLL024NPBF IRLL024NTR
OCR Text ...J = 25C, IF = 1.9A --- 63 94 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 1.9A, di/dt 2...
Description 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
HEXFET Power MOSFET(HEXFET 功率MOS场效应管)
HEXFET Power MOSFET(HEXFET ???MOS?烘?搴??)
4.4 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA

File Size 113.26K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQA55N10
OCR Text ... Starting TJ = 25C 3. ISD 55A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fairchild Semiconductor International Rev. A, J...
Description 100V N-Channel MOSFET

File Size 660.93K  /  8 Page

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    IRF7421D1 IRF7421D198

International Rectifier
Part No. IRF7421D1 IRF7421D198
OCR Text ...ure (see figure 11) ISD 4.1A, di/dt 110A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2% Surface mounted on FR-4 board, t ...510 200 84 Max. Units Conditions -- V VGS = 0V, ID = 250A 0.035 VGS = 10V, ID = 4.1A 0.060 VGS = 4...
Description FETKY MOSFET & Schottky Diode TM
MOSFET / Schottky Diode

File Size 173.12K  /  8 Page

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    MICRO-LINEAR[Micro Linear Corporation]
Part No. ML4665 ML4665CQ
OCR Text ... 3 pairs of signals: DO, CI and DI (Figure 1). The DO pair contains transmit data from the DTE which is received by the transceiver and sent...510 5k COL+, Rx+ Tx+ VBB IN914 (OR EQUIVALENT) MC10125 (OR EQUIVALENT) 0.01 100k 74C04 (...
Description Low Cost Single Chip 10BASE-FL Transceiver

File Size 167.84K  /  13 Page

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    IRFB41N15D IRFS41N15D IRFSL41N15D

IRF[International Rectifier]
Part No. IRFB41N15D IRFS41N15D IRFSL41N15D
OCR Text ...J = 25C, IF = 25A --- 1.3 1.9 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFB/IRFS/IRFSL41N15D 1000 VGS 15V 10V 9.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP 1000 I D , D...
Description Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

File Size 189.85K  /  11 Page

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