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96mm Datasheet PDF File

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				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	...lanche Energy Avalanche Current*9.0 Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range ...6mm from case ) Units A W W W/C V mJ mJ V/ns C Thermal Resistance Parameter RJC RJA Junctio...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840AL IRF840AS IRF840ASTRR
OCR Text	...S = 50V, ID = 4.8A 38 ID = 8.0A 9.0 nC VDS = 400V 18 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 8.0A ns --- RG = 9.1 --- RD = 31,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1....
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\| 8A条（丁）\|63AB Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	125.49K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF840A
OCR Text	...S = 50V, ID = 4.8A 38 ID = 8.0A 9.0 nC VDS = 400V 18 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 8.0A ns --- RG = 9.1 --- RD = 31,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1....
Description	Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A) Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	87.92K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	... 250V --- ID = 8.0A ns --- RG = 9.1 --- RD = 30, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 1100 --- VGS = 0V 170 --- pF VDS = 25V 18 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VS...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited SEME-LAB[Seme LAB]
Part No.	IRF9130SMD
OCR Text	9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 ...6mm down drain lead pad to centre of die) A V ns TJ = 25C 4.7 300 3 8.7 8.7 mC nH (f...
Description	P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
File Size	20.44K / 2 Page	View it Online	Download Datasheet

				SEMELAB LTD SEME-LAB[Seme LAB]
Part No.	IRF9140
OCR Text	...DSS , TJ 150C , Suggested RG = 9.1 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9/96 IRF91...6mm down drain lead to centre of die) Internal Source Inductance (from 6mm down source lead to sourc...
Description	P-CHANNEL POWER MOSFET
File Size	21.26K / 2 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	... = -10A, VGS = -10V (Figures 8, 9) VDS = -10V, ID = -12.5 (Figure 12) VDD = -50V, ID -25A, RG = 6.8, RL = 2.0, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature MIN -100 -2 -25 4 - TYP 0.09 ...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text	... d(off) tf VGS 10% Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - V DD 5 ...
Description	TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) CAP CER 250VAC 82PF 5% SL 1808 6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	148.64K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520NL IRF9520NS
OCR Text	... V DS = 10V 20s PULSE WIDTH 8 9 10 0.0 -60 -40 -20 0 VGS = -10V 20 40 60 80 100 120 140 160 180 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized ...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
File Size	151.66K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520N
OCR Text	... V DS = 10V 20s PULSE WIDTH 8 9 10 0.0 -60 -40 -20 0 VGS = -10V 20 40 60 80 100 120 140 160 180 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized ...
Description	Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
File Size	91.94K / 8 Page	View it Online	Download Datasheet

For 96mm Found Datasheets File :: 14670 Search Time::1.984ms
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