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WHITE ELECTRONIC DESIGNS CORP
MICROSEMI CORP-PMG MICROELECTRONICS
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| Part No. |
EDI7P16FLD222C15 EDI7P12FLD222C15 EDI7P24FLD222C15 EDI7P20FLD222I15 EDI7P16FLD210C15 EDI7P4FLD210C15
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| OCR Text |
...age nc 53 a 22 i address bit 22 8mb(3) 54 a 23 i address bit 23 16mb(3) 55 a 24 i address bit 24 32mb(3) 56 a 25 i address bit 25 64mb(3) 57...4mb) 2,3 80 230 a v cc = 5v +/- 10% control signals = v il or v oh reset = v ss test conditions: ... |
| Description |
8M X 16 FLASH 5V PROM CARD, 150 ns, XMA68
6M X 16 FLASH 5V PROM CARD, 150 ns, XMA68
12M X 16 FLASH 5V PROM CARD, 150 ns, XMA68
10M X 16 FLASH 5V PROM CARD, 150 ns, XMA68
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| File Size |
352.26K /
11 Page |
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CYPRESS SEMICONDUCTOR CORP
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| Part No. |
MT58L128L32D1F-5
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| OCR Text |
...reserved for address expansion, 8mb and 16mb respectively. tqfp pin assignment table pin # x18 x32/x36 1 nc nc/ dqpc * 2nc dqc 3nc dqc 4v dd...4mb: 256k x 18, 128k x 32/36 3.3v i/o pipelined, dcd syncburst sram micron technology, inc., reserve... |
| Description |
128K X 32 STANDARD SRAM, 2.8 ns, PBGA165
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| File Size |
429.23K /
25 Page |
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CYPRESS SEMICONDUCTOR CORP
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| Part No. |
MT58L128L32D1F-6
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| OCR Text |
...reserved for address expansion, 8mb and 16mb respectively. tqfp pin assignment table pin # x18 x32/x36 1 nc nc/ dqpc * 2nc dqc 3nc dqc 4v d...4mb: 256k x 18, 128k x 32/36 3.3v i/o pipelined, dcd syncburst sram micron technology, inc., reserve... |
| Description |
128K X 32 CACHE SRAM, 3.5 ns, PBGA165
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| File Size |
437.01K /
26 Page |
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Micron Technology, Inc.
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| Part No. |
MT58L128L32D1
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| OCR Text |
...reserved for address expansion, 8mb and 16mb respectively. tqfp pin assignment table pin # x18 x32/x36 1 nc nc/ dqpc * 2nc dqc 3nc dqc 4v dd...4mb: 256k x 18, 128k x 32/36 3.3v i/o pipelined, dcd syncburst sram micron technology, inc., reserve... |
| Description |
128K x 32锛?.3V I/O Pipelined, DCD SyncBurst SRAM(4mb锛?.3V杈??/杈??锛??姘寸嚎寮????惊???娑???╋??????????瀛???ī
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| File Size |
418.97K /
24 Page |
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it Online |
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Sony, Corp.
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| Part No. |
CXK77B1841AGB CXK77B3641AGB
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| OCR Text |
...fined as an sa address input in 8mb and 16mb lw srams. 3. pad location 2b is a true no-connect. however, it is defined as an sa address inpu...4mb, sync lw, lvttl, rev 1.2 3 / 28 september 24, 1998 sony ? cxk77b3641agb / cxk77b1841agb prelimi... |
| Description |
4mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4mb的后写入LVTTL高速同步SRAM28K的x 36Bit）（4分位，写延迟LVTTL高速同步静态随机存储器28K的36位）
4mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发（HSTL）、高速同步静态RAM (128K x 36) 4mb的后写入LVTTL高速（128K的x 36Bit）（4分位，写延迟，高速逻辑收发（HSTL），高速同步静态随机存储器28K的36位）同步静态存储器
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| File Size |
227.24K /
28 Page |
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Samsung Electronic
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| Part No. |
K5C6481NTBM
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| OCR Text |
...ctable) (4mb, 4mb, 28mb,2 8mb) block architecture t = top boot block b = bottom boot block version m = 1st generation sram access time 55 = 55 ns operating voltage range 2.7v to 3.0v package t = 81 tbga sram density , organization 8mb... |
| Description |
Multi-Chip Package MEMORY Data Sheet
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| File Size |
591.10K /
39 Page |
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it Online |
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