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80ns Datasheet PDF File

For 80ns Found Datasheets File :: 724 Search Time::0.922ms
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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K8D1716U K8D1716UT K8D1716UB K8D1716UBB-TC07 K8D1716UBB K8D1716UBB-TC08 K8D1716UBB-TC09 K8D1716UTB-TC07 K8D1716UTB K8D1716UTB-TC08 K8D1716UTB-TC09 K8D1716UTB-YI09 K8D1716UBB-TI07 K8D1716UBB-TI08 K8D1716UBB-TI09 K8D1716UBB-YC07 K8D1716UBB-YC08 K8D1716UBB-YC09 K8D1716UBB-YI07 K8D1716UBB-YI08 K8D1716UBB-YI09 K8D1716UTB-TI07 K8D1716UTB-TI08 K8D1716UTB-TI09 K8D1716UTB-YC07 K8D1716UTB-YC09 K8D1716UTB-YI07 K8D1716UTB-YI08 K8D1716UTB-YC08
OCR Text	...her bank. Access times of 70ns, 80ns and 90ns are available for the device. The devices fast access times allow high speed microprocessors to operate without wait states. The device performs a program operation in units of 8 bits (Byte) or ...
Description	16M Dual Bank NOR Flash Memory 16M BIT (2M X8/1M X16) DUAL BANK NOR FLASH MEMORY
File Size	479.04K / 40 Page	View it Online	Download Datasheet

				MICRON[Micron Technology]
Part No.	MT28F004B3 MT28F400B3SG-8B MT28F400B3SG-8T MT28F004B3SG-8B MT28F004B3SG-8T MT28F400B3WG-8B MT28F004B3VG-8B MT28F004B3VG-8T MT28F004B3WG-8B MT28F004B3WG-8T MT28F400B3 MT28F400B3VG-8B MT28F400B3VG-8T
OCR Text	... process * Address access time: 80ns * 100,000 ERASE cycles * Industry-standard pinouts * Inputs and outputs are fully TTL-compatible * Automated write and erase algorithm * Two-cycle WRITE/ERASE sequence * Byte- or word-wide READ and WRITE...
Description	FLASH MEMORY
File Size	398.26K / 30 Page	View it Online	Download Datasheet

				MICRON[Micron Technology]
Part No.	MT28F004B5-1
OCR Text	...5 device * Address access time: 80ns * 100,000 ERASE cycles * Industry-standard pinouts * Inputs and outputs are fully TTL-compatible * Automated write and erase algorithm * Two-cycle WRITE/ERASE sequence * Byte- or word-wide READ and WRITE...
Description	FLASH MEMORY
File Size	411.66K / 32 Page	View it Online	Download Datasheet

				优先(苏州)半导体有限公
Part No.	ES29BDS160E-12RTG ES29DL160D-12RTG ES29BDS160F-12RTG ES29BDS160D-12RTG ES29BDS320F-12RTG ES29BDS320D-12RTG ES29BDS640FB-80RTG ES29BDS800D-12RTG
OCR Text	...vcc range ( 2.7v - 3.6v ) - 80ns for regulated vcc range ( 3.0v - 3.6v ) ? program and erase time - program time : 9us/ byte, 11us/word ( typical ) - accelerated program ti me : 8us/word ( typical ) - sector erase time : 0....
Description	32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory 32兆（4米8/2M × 16），3.0伏的CMOS只，引导扇区闪存
File Size	604.95K / 59 Page	View it Online	Download Datasheet

				MICRON[Micron Technology]
Part No.	MT28F008B5 MT28F800B5
OCR Text	...5 device * Address access time: 80ns * 100,000 ERASE cycles * Industry-standard pinouts * Automated write and erase algorithm * Two-cycle WRITE/ERASE sequence * TSOP and SOP packaging options * Byte- or word-wide READ and WRITE (MT28F800B5,...
Description	FLASH MEMORY
File Size	326.27K / 30 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	GM71V16163C
OCR Text	...)16163cj/clj -8 50 ns 60ns 70ns 80ns 400 mil 42 pin plastic soj 50 ns 60ns 70ns 80ns 400 mil 44(50) pin plastic tsop ii (normal type) gm71v(s)16163ct/clt -5 gm71v(s)16163ct/clt -6 gm71v(s)16163ct/clt -7 gm71v(s)16163ct/clt -8 * note: all...
Description	(GM71VS16163CL / GM71V16163C) 1M x 16-Bit CMOS DRAM
File Size	155.00K / 13 Page	View it Online	Download Datasheet

				http://
Part No.	MT28F004B5-1
OCR Text	...5 device address access time: 80ns 100,000 erase cycles industry-standard pinouts inputs and outputs are fully ttl-compatible automated write and erase algorithm two-cycle write/erase sequence byte- or word-wide read and write...
Description	FLASH MEMORY
File Size	417.99K / 32 Page	View it Online	Download Datasheet

				etc
Part No.	ES29DS320D ES29DL400D ES29DL800D ES29DS400D ES29DS800D ES29LV320D ES29F640D
OCR Text	...vcc range ( 2.7v - 3.6v ) - 80ns for regulated vcc range ( 3.0v - 3.6v ) ? program and erase time - program time : 9us/ byte, 11us/word ( typical ) - accelerated program ti me : 8us/word ( typical ) - sector erase time : 0....
Description	32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
File Size	653.87K / 58 Page	View it Online	Download Datasheet

				OKI SEMICONDUCTOR CO., LTD. OKI[OKI electronic componets] OKI electronic components
Part No.	MSM534001E
OCR Text	...4,288-words x 8-bit Access time 80ns MAX Input/Output TTL compatible Tri-State output configurations Internal powerdown function Packages: 32-PIN PLASTIC DIP (DIP32-P-600-2.54) 32-PIN PLASTIC SOP (SOP32-P-525-1.27-K) 32-PIN PLASTIC TSOP (TS...
Description	524,288-Word x 8-Bit MASKROM 524288-Word x 8-Bit MASKROM From old datasheet system
File Size	65.37K / 8 Page	View it Online	Download Datasheet

				意法半导
Part No.	M29W800AB
OCR Text	...ad operations fast access time: 80ns fast programming time: 10 m s typical program/erase controller (p/e.c.) program byte-by-byte or word-by-word status register bits and ready/busy output security protection memory area memory blocks bo...
Description	8Mbit(1Mbx8 or 512Kbx16, Block Erase) Low Voltage Single Supply Flash Memory(8Mb闪速存储器)
File Size	32.24K / 4 Page	View it Online	Download Datasheet

For 80ns Found Datasheets File :: 724 Search Time::0.922ms
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