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8.7a 6.4a Datasheet PDF File

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				SUTEX[Supertex, Inc]
Part No.	VN2406 VN2410 VN2410L VN2406L
OCR Text	...10 VN2406 1.2 1.2 300 125 50 20 8 8 23 24 V V VGS = 0V, ISD = 0.19A VGS = 0V, ISD = 0.8A ns VDD = 60V ID = 0.4A RGEN = 25 pF VGS = 0V, VDS = 25V f = 1 MHz 1.0 1.0 10 10 6 1.4 %/C m A A V nA Conditions VGS = 0V, ID = 0.1mA VGS = VDS, ID = 1...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	436.83K / 2 Page	View it Online	Download Datasheet

				LAMBDA[DENSEI-LAMBDA] TE Connectivity, Ltd. Unity Opto Technology Co., Ltd.
Part No.	VS50B-12 VS50B-15 VS50B-24 VS50B-3 VS50B-5 VS150B-12 VS150B-15 VS150B-24 VS150B-3 VS150B-36 VS150B-48 VS150B-5 VS75B-5 VS100B VS100B-12 VS100B-15 VS100B-24 VS100B-3 VS100B-36 VS100B-48 VS100B-5 VS10B-12 VS10B-15 VS10B-24 VS10B-3 VS10B-5 VS15B-12 VS15B-15 VS15B-24 VS15B-3 VS15B-5 VS30B-12 VS30B-15 VS30B-24 VS30B-3 VS30B-36 VS30B-48 VS30B-5 VS75B-12 VS75B-15 VS75B-24 VS75B-3 VS75B-36 VS75B-48
OCR Text	.... Safety standard 7. CE marking 8. EMI 9. Functions 85 ~ 132VAC (47 ~ 440Hz), 110 ~ 175VDC 10% Convection cooling VS10C~VS100B / -10C~+60C(-...7A 15V 12.0W 0.5A 24V 9.9W 3.0A 3.3V 15.0W 3.0A 5V 15.6W 1.3A 12V 15.0W 1.0A 15V 16.8W 0.7A 24V 19.8...
Description	Single output 10W~150W External Plug-In Power Supply; Series:; Output Voltage:24V; Output Power Max:30W; Output Current:1.25A; No. of Outputs:1; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Power Supply Efficiency:86% RoHS Compliant: Yes External Plug-In Power Supply; Series:; Output Voltage:18V; Output Power Max:30W; Output Current:1.67A; No. of Outputs:1; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Power Supply Efficiency:85% RoHS Compliant: Yes Switch Mode Power Supply; Output Power:28W; No. of Outputs:1; Output 1 VDC :12VDC; Output Current 1:2.3A; Leaded Process Compatible:No; Output Current:2.3A; Output Power Max:28W; Output Voltage:12V RoHS Compliant: No CAP .01UF 400V POLYPROPYLENE Single output 10W~150W 单输出功0W150
File Size	230.06K / 3 Page	View it Online	Download Datasheet

				Infineon Technologies A... Infineon Technologies AG
Part No.	BTS5215L
OCR Text	... 2 4 3 5 6,12, heat slug 7,9,11 8 10 Symbol GND IN1 IN2 ST1 ST2 Vbb Function Ground of chip Input 1,2 activates channel 1,2 in case of logic high signal Diagnostic feedback 1 & 2 of channel 1,2 open drain, low on failure Positive power supp...
Description	Smart High-Side Power Switch Two Channels: 2 x 90m?/a> Status Feedback Smart High-Side Power Switch Two Channels: 2 x 90m Status Feedback Smart High Side Switches - 5,5-40V, 2x90m Limit(scr) 12A P-DSO-12
File Size	237.77K / 14 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG SIEMENS A G
Part No.	BTS933
OCR Text	...ax. VIN(th) 1.4 1.2 1.0 0.8 0.6 30 0.4 20 10 0 -50 -25 0 25 50 75 100 C 0.2 0.0 -50 150 -25 0 25 50 75 100 C 150 Tj Tj Page 6 Semiconductor Group 14.07.1998 BTS 933 Typ. transfer ...
Description	From old datasheet system Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection) 80 A BUF OR INV BASED PRPHL DRVR, PSFM5
File Size	193.06K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BU2525AF
OCR Text	... time CONDITIONS VBE = 0 V TYP. 8.0 0.2 MAX. 1500 800 12 30 45 5.0 0.35 UNIT V V A A W V A s Ths 25 C IC = 8.0 A; IB = 1.6 A ICsat = 8.0...7A 100 Tj = 25 C 0.4 0.3 0.2 0.1 0 0.1 Tj = 125 C 1 IC / A 10 100 10 0.1 1 IB /...
Description	Silicon Diffused Power Transistor
File Size	70.77K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BU2525AW
OCR Text	...ll time CONDITIONS VBE = 0 TYP. 8 0.2 MAX. 1500 800 12 30 125 5.0 0.35 UNIT V V A A W V A s Tmb 25 C IC = 8.0 A; IB = 1.6 A ICsat = 8.0 ...7A 0.1 1 IB / A tf 10 Fig.9. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter ...
Description	Silicon Diffused Power Transistor
File Size	74.93K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BU2525AX
OCR Text	... time CONDITIONS VBE = 0 V TYP. 8.0 0.2 MAX. 1500 800 12 30 45 5.0 0.35 UNIT V V A A W V A s Ths 25 C IC = 8.0 A; IB = 1.6 A ICsat = 8.0...7A 100 Tj = 25 C 0.4 0.3 0.2 0.1 0 0.1 Tj = 125 C 1 IC / A 10 100 10 0.1 1 IB /...
Description	Silicon Diffused Power Transistor
File Size	72.99K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BU2525A
OCR Text	...ll time CONDITIONS VBE = 0 TYP. 8 0.2 MAX. 1500 800 12 30 125 5.0 0.35 UNIT V V A A W V A s Tmb 25 C IC = 8.0 A; IB = 1.6 A ICM = 8.0 A;...7A 0.1 1 IB / A tf 10 Fig.9. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter ...
Description	Silicon Diffused Power Transistor
File Size	51.22K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BU2525DF BU2508DF
OCR Text	... time CONDITIONS VBE = 0 V TYP. 8.0 3.0 MAX. 1500 800 12 30 45 5.0 4.0 UNIT V V A A W V A s Ths 25 C IC = 8.0 A; IB = 1.6 A ICsat = 8.0 ...7A 100 Tj = 25 C 0.4 0.3 0.2 0.1 0 0.1 Tj = 125 C 1 IC / A 10 100 10 0.1 1 IB /...
Description	Silicon Diffused Power Transistor
File Size	71.42K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BU2525DW
OCR Text	...ge time CONDITIONS VBE = 0 TYP. 8 3.0 MAX. 1500 800 12 30 125 5.0 4.0 UNIT V V A A W V A s Tmb 25 C IC = 8.0 A; IB = 1.6 A ICsat = 8.0 A...7A 100 0.5 0.1 0.2 0.1 0.05 0.02 0.01 D=0 0.001 1E-06 P D tp D= tp T t 10 0.1 1 IB / A 10 ...
Description	Silicon Diffused Power Transistor
File Size	74.81K / 7 Page	View it Online	Download Datasheet

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