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  752.045 Datasheet PDF File

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    APT30D30S

Advanced Power Technology
Part No. APT30D30S
OCR Text ....05 (.632) 18.70 (.736) 19.10 (.752) 1.15 (.045) 1.45 (.057) 5.45 (.215) bsc (2 plcs.) 4.90 (.193) 5.10 (.201) 1.45 (.057) 1.60 (.063) 2.70 (.106) 2.90 (.114) 0.40 (.016) 0.65 (.026) dimensions in millimeters (inches) heat sink (cathode) an...
Description ULTRAFAST SOFT RECOVERY RECTIFIER DIODE 300V 30A

File Size 33.86K  /  2 Page

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    JST
Part No. 20R-JMDSS-G-1-TF
OCR Text ... 14.1( .555) 16.6( .654) 19.1( .752) 21.6( .850) 24.1( .949) 29.1(1.146) 5.7( .224) 8.2( .323) 10.7( .421) 13.2( .520) 15.7( .618) 18.2( .717) 20.7( .815) 25.7(1.012) 4.8(.189) ModelTop entry type No. Top entry(.117") 4.5mm type 20P-J...
Description HEADER CONNECTOR

File Size 214.92K  /  3 Page

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    UPA804T UPA804T-T1

NEC
Part No. UPA804T UPA804T-T1
OCR Text ...0 2900.00 3000.00 S11 MAG .874 .752 .625 .523 .444 .396 .359 .336 .318 .307 .299 .294 .292 .292 .293 .296 .298 .300 .302 .310 .314 .318 .323...045 1.950 1.873 1.793 1.726 1.662 1.609 1.556 1.513 1.466 1.427 1.387 1.353 1.323 S21 ANG 152.9 135....
Description SILICON TRANSISTOR

File Size 48.88K  /  8 Page

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    IXFH26N60 IXFK28N60 IXFT26N60

http://
IXYS[IXYS Corporation]
Part No. IXFH26N60 IXFK28N60 IXFT26N60
OCR Text ...4 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,83...
Description HiPerFET Power MOSFETs

File Size 69.85K  /  2 Page

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    IXBH16N170A IXBT16N170A

IXYS[IXYS Corporation]
Part No. IXBH16N170A IXBT16N170A
OCR Text ...4 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 = IC90, VGE = 0 V, Pulse test, < 300 us, duty cycle d < 2% = IC90, VGE = 0 V, -diF/dt = 50 A/us = 100V Notes: 1. Device must be heatsunk for high tem...
Description Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor

File Size 50.78K  /  2 Page

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    IXFH40N30Q IXFT40N30Q

ETC
IXYS[IXYS Corporation]
Part No. IXFH40N30Q IXFT40N30Q
OCR Text ...4 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,83...
Description Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Q-Class

File Size 51.11K  /  2 Page

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