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  600v-120v Datasheet PDF File

For 600v-120v Found Datasheets File :: 877    Search Time::2.265ms    
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    FQPF10N60C FQP10N60C

FAIRCHILD[Fairchild Semiconductor]
Part No. FQPF10N60C FQP10N60C
OCR Text 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's p...120V VDS = 300V VDS = 480V 2000 VGS, Gate-Source Voltage [V] Ciss 8 Capacitance [pF] ...
Description 600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET

File Size 833.08K  /  10 Page

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    SSF10N60B

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. SSF10N60B
OCR Text 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's p...120V VDS = 300V Ciss VGS, Gate-Source Voltage [V] 3000 8 Capacitance [pF] VDS = 48...
Description 600V N-Channel MOSFET 6.9 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 674.24K  /  8 Page

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    SSS10N60B SSP10N60 SSP10N60B

FAIRCHILD[Fairchild Semiconductor]
Part No. SSS10N60B SSP10N60 SSP10N60B
OCR Text 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's p...120V VDS = 300V Ciss VGS, Gate-Source Voltage [V] 3000 8 Capacitance [pF] VDS = 48...
Description 600V N-Channel MOSFET

File Size 906.56K  /  10 Page

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    Bookly
Part No. BM01N60
OCR Text ...60 Features * * * * * * 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 V Low gate charge ( typical 5.0 nC) Low Crss ( typical 3.0 pF) Fast switching...120V 10 Ciss 150 VDS = 300V VDS = 480V VGS , Gate-Source Voltage [V] 8 Capacitance ...
Description MOSFET

File Size 814.96K  /  8 Page

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    IRFB16N60L

International Rectifier
ir
Part No. IRFB16N60L
OCR Text ...terruptible Power Supplies 385m 600V 130ns 16A * Motor Control applications Features and Benefits * SuperFast body diode eliminates the need...120V ISD, Reverse Drain Current (A) 10.0 8.0 10.00 T J = 150C 6.0 4.0 1.00 ...
Description 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
TRANSISTOR,MOSFET,N-CHANNEL,

File Size 543.56K  /  9 Page

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    IRFB9N60A IRFB9N60

IRF[International Rectifier]
Part No. IRFB9N60A IRFB9N60
OCR Text ...ive Requirements D VDSS = 600V G S RDS(on) = 0.75 ID = 9.2A Description Third Generation HEXFETs from International Rectifier ...120V 16 C , Capacitance (pF ) C iss 1600 C oss 1200 12 8 800 400 C rss ...
Description Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

File Size 131.59K  /  8 Page

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    IRFIB6N60A IRFIB6N60APBF

IRF[International Rectifier]
Part No. IRFIB6N60A IRFIB6N60APBF
OCR Text ...HEXFET(R) Power MOSFET VDSS 600V Rds(on) max 0.75W ID 5.5A TO-220 FULLPAK GDS Absolute Maximum Ratings Parameter ID @...120V 16 C, Capacitance (pF) Ciss 1600 Coss 1200 12 8 800 400 Crss 4 ...
Description 600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=0.75ohm/ Id=5.5A)

File Size 146.70K  /  8 Page

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    IRFS9N60A

Fairchild Semiconductor
International Rectifier
Part No. IRFS9N60A
OCR Text ...Voltage and Current l VDSS 600V RDS(on) max 0.75 ID 9.2A GDS D2Pak Absolute Maximum Ratings Parameter ID @ TC = 25C ...120V 16 C , Capacitance (pF ) C iss 1600 C oss 1200 12 8 800 400 C rss ...
Description 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
HEXFET? Power MOSFET
SMPS MOSFET

File Size 103.89K  /  9 Page

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    IRFSL9N60A

IRF[International Rectifier]
Part No. IRFSL9N60A
OCR Text ...h hole application. l VDSS 600V Rds(on) max 0.75 ID 9.2A Benefits Low Gate Charge Qg results in Simple Drive Requirement l I...120V 16 C , Capacitance (pF ) C iss 1600 C oss 1200 12 8 800 400 C rss ...
Description SMPS MOSFET
HEXFET? Power MOSFET

File Size 111.53K  /  8 Page

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    SSU1N60B SSR1N60B SSR1N60BTM SSU1N60BTU

FAIRCHILD[Fairchild Semiconductor]
Part No. SSU1N60B SSR1N60B SSR1N60BTM SSU1N60BTU
OCR Text 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's p...120V 10 VDS = 300V 200 Ciss VGS, Gate-Source Voltage [V] 8 Capacitance [pF] VDS ...
Description    600V N-Channel MOSFET
600V N-Channel B-FET / Substitute of SSP1N60A
600V N-Channel B-FET / Substitute of SSU1N60A

File Size 634.36K  /  9 Page

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